SSL4407
-50A, -30V,RDS(ON) 14mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SSL4407 provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-263 is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters and high efficiency switching
circuit.
Features
* Lower On-Resistance
* Simple Drive Requirement
* Fast Switching Characteristics
D
REF.
A
b
L4
c
L3
L1
E
G
S
Millimeter
Min.
Max.
4.40
4.80
0.76
1.00
0.00
0.30
0.36
0.5
1.50 REF.
2.29
2.79
9.80
10.4
REF.
c2
b2
D
e
L
θ
L2
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
8.6
9.0
2.54 REF.
14.6
15.8
o
o
0
8
1.27 REF.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±25
V
Continuous Drain Current,VGS@10V
ID@TA=25 oC
-50
A
Continuous Drain Current,VGS@10V
o
-32
A
-180
A
54
W
0.4
W / oC
Pulsed Drain Current
ID@TA=100 C
1
IDM
o
PD@TA=25 C
Total Power Dissipation
Linear Derating Factor
Tj, Tstg
Operating Junction and Storage Temperature Range
o
C
-55~+150
Thermal Data
Symbol
Parameter
Thermal Resistance Junction-case
Max.
Thermal Resistance Junction-ambient
Max.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Rthj-c
Rthj-a
Ratings
Unit
2.3
o
62
o
C /W
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SSL4407
-50A, -30V,RDS(ON) 14mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Symbol
Parameter
Unit
Test Condition
_
V
VGS=0V, ID=-250uA
BVDS/ Tj
_
- 0.01
_
VGS(th)
-1.0
_
-3.0
V
IGSS
_
_
±100
nA
VGS=±25V
_
_
-1
uA
VDS=-30V,VGS=0
_
_
-25
uA
VDS=-24 V ,VGS=0
_
_
Gate-Source Leakage Current
o
Drain-Source Leakage Current (Tj=25 C )
IDSS
o
Drain-Source Leakage Current(Tj=150C )
2
Max.
_
- 30
Gate Threshold Voltage
Static Drain-Source On-Resistance
Typ.
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min.
RD S (O N )
o
V/ C
14
_
_
23
35
60
5
_
Total Gate Charge2
Qg
_
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
_
26
_
Td(ON)
_
11
_
Tr
_
64
_
Td(Off)
_
63
_
Tf
_
100
_
Ciss
_
2120
3390
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
_
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
_
Forward Transconductance
Gfs
_
630
mΩ
o
Reference to 25 C, ID=- 1mA
VDS=VGS, ID=-250uA
VGS=-10V, ID=- 24A
VGS=-4.5 V, ID=- 16A
nC
ID=-24A
VDS=-24 V
VGS=-4.5V
VDD=-15 V
ID=-24A
nS
VGS=-10V
RG=3.3Ω
_
RD=0.63Ω
pF
VGS=0V
VDS=-25V
VDS=-10V, ID=-24A
550
_
36
_
S
f=1.0MHz
Source-Drain Diode
Symbol
Min.
Typ.
Max.
Unit
VSD
_
_
-1.2
V
IS=-24 A,VGS=0V.
Reverse Recovery Time
Trr
_
39
nS
IS=-24 A,VGS=0V.
Reverse Recovery Change
Qrr
_
38
Parameter
Forward On Voltage 2
2
_
_
nC
Test Condition
dl/dt=100A/us
Notes: 1. Pulse width limited by safe operating area.
2.Pulse width≦300us, dutycycle≦2%.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SSL4407
Elektronische Bauelemente
-50A, -30V,RDS(ON) 14mΩ
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SSL4407
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
-50A, -30V,RDS(ON) 14mΩ
P-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
12
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
/W
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4