SSM9563
-6A, -40V,RDS(ON) 40mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
SOT-223
The SSM9563 provide the designer with best
combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SSM9563 is universally preferred for all
commercial-industrial surface mount applications
and suited for low voltage applications such as
DC/DC converters.
Features
* Simple Drive Requirement
* Fast Switching Characteristic
* Lower On-Resistance
D
Date Code
REF.
A
C
D
E
I
H
9 5 6 3
G
G
D
S
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0°
10°
0.60
0.80
0.25
0.35
S
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13°TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
-40
V
VGS
±25
V
-6..0
A
ID@TA=70 C
-4..8
A
IDM
-30
A
2.7
W
0.02
W / oC
o
1,2
o
PD@TA=25 C
Total Power Dissipation
Linear Derating Factor
Tj, Tstg
Operating Junction and Storage Temperature Range
Unit
VDS
ID@TA=25 oC
3
Ratings
o
C
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
3
Max.
Rthj-a
Ratings
50
Unit
o
C/W
Any changing of specification will not be informed individual
Page 1 of 4
SSM9563
-6A, -40V,RDS(ON) 40mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
BVDSS
- 40
_
BVDS/ Tj
_
VGS(th)
IGSS
o
Drain-Source Leakage Current (Tj=25 C )
o
Drain-Source Leakage Current(Tj= 70 C )
Static Drain-Source On-Resistance
2
IDSS
RD S (O N )
- 0.03
_
V/ C
-1.0
_
-3.0
V
VDS=VGS, ID=-250uA
_
_
±100
nA
VGS=±25V
_
_
-1
uA
VDS=-40V,VGS=0
_
_
-25
uA
VDS=-32 ,VGS=0
_
_
_
60
19
30
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
Fall Time
Input Capacitance
Output Capacitance
_
Td(ON)
_
Tr
_
Td(Off)
_
Tf
_
Ciss
Coss
40
_
_
Turn-off Delay Time
Test Condition
V
Qg
Rise Time
Unit
_
Total Gate Charge2
Turn-on Delay Time2
Max.
_
_
Reverse Transfer Capacitance
Crss
_
Forward Transconductance
Gfs
_
5
_
8
_
12
_
7
_
68
_
38
_
1600
240
190
10
o
mΩ
VGS=0V, ID=-250uA
o
Reference to 25 C, ID=- 1mA
VGS=-10V, ID=- 6A
VGS=-4.5V, ID=-4 A
nC
ID=-6A
VDS=-32V
VGS=-4.5V
VDD=-20V
ID=-1A
nS
VGS=-10 V
RG=3.3Ω
RD=20 Ω
2560
_
pF
VGS=0V
VDS=-25V
S
VDS=-10V, ID=-6 A
f=1.0MHz
_
_
Source-Drain Diode
Parameter
Forward On Voltage 2
2
Reverse Recovery Time
Reverse Recovery Change
Symbol
Min.
Typ.
Max.
Unit
-1.2
V
IS=-2A, VGS=0V.
nS
IS=-6A, VGS=0V.
VSD
_
_
Trr
_
37
_
54
_
Qrr
_
nC
Test Condition
dl/dt=100A/us
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
2
o
3.Surface mounted on 1 in copper pad of FR4 board;120 C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SSM9563
Elektronische Bauelemente
-6A, -40V,RDS(ON) 40mΩ
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 5. Forward Characteristics of
Reverse Diode
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SSM9563
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
-6A, -40V,RDS(ON) 40mΩ
P-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
12
120
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
/W
/W
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4