SST2625
-2.3A, -30V,RDS(ON) 135mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOT-26
Description
0.37Ref.
0.20
The SST2625 utiltzed advance processing techniques to achieve the lowest
0.60 Ref.
2.60
3.00
possible on-resistance, extermely efficient and cost-effectiveness device.
0.25
The SST2625 is universally used for all commercial-industrial applications.
1.40
1.80
0.30
0.55
0.95 Ref.
0~0.1
2.70
3.10
o
1.20Ref.
0
o
10
Features
Dimensions in millimeters
* Low On-Resistance
* Low Gate Charge
D1
D2
S1
D2
6
5
4
2625
Date Code
G2
G1
D1
S2
S1
1
2
3
G1
S2
G2
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 3
Continuous Drain Current 3
Pulsed Drain Current 1
Total Power Dissipation
Unit
-30
V
±12
V
o
-2.3
A
o
ID@TA=70 C
-2.0
A
IDM
-20
A
1.2
W
0.01
W/ C
ID@TA=25 C
o
PD@TA=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Ratings
Tj, Tstg
o
o
C
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 (Max)
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
Rthj-a
Ratings
110
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SST2625
-2.3A, -30V,RDS(ON) 135mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
o
Drain-Source Leakage Current (Tj=70 C)
Static Drain-Source On-Resistance 2
Symbol
Min.
Typ.
Max.
Unit
Test Condition
BVDSS
-30
_
_
V
VGS=0V, ID=-250uA
BVDS/ Tj
_
-0.02
_
V/ oC
VGS(th)
-0.5
_
-1.2
V
VDS=VGS, ID=-250uA
IGSS
_
_
±100
nA
VGS=± 12V
_
_
-1
uA
VDS=-30V,VGS=0
_
_
-25
uA
VDS=-24V,VGS=0
_
_
135
_
_
_
_
265
IDSS
RDS(ON)
185
Total Gate Charge 2
Qg
_
4
6
Gate-Source Charge
Qgs
_
0. 5
_
Gate-Drain ("Miller") Charge
Qgd
2
_
5
_
6
_
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
_
Td(ON)
_
Tr
_
Td(Off)
_
Tf
_
3
_
_
265
425
42
_
32
_
Ciss
_
20
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
_
Gfs
_
Symbol
Min.
Typ.
_
_
Forward Transconductance
3.3
_
Reference to 25oC ,ID=-1mA
VGS=-10V, ID=-2A
mΩ
VGS=-4.5V, ID=-1.6A
VGS=-2.5V, ID=-1.0A
nC
ID=-2A
VDS=-24V
VGS=-4.5V
VDD=-15V
ID=-1A
nS
VGS=-10V
RG=3.3Ω
RD=15 Ω
pF
VGS=0V
VDS=-25V
_
S
VDS=-5V, ID=-2A
Max.
Unit
Test Condition
-1.2
V
IS=-1. A, VGS=0V.
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage 2
VDS
Reverse Recovery Time 2
Trr
Reverse Recovery Charge
Qrr
_
_
21
16
_
_
nS
Is=-2A, V GS=0V
nC
dl/dt=100A/uS
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
2
3.Surface mounted on 1 in copper pad of FR4 board; 180 OC/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SST2625
Elektronische Bauelemente
-2.3A, -30V,RDS(ON) 135mΩ
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SST2625
Elektronische Bauelemente
-2.3A, -30V,RDS(ON) 135mΩ
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4