STT2604 5.5A, 30V,RDS(ON) 45mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2604 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The STT2604 is universally used for all commercial-industrial applications. Features * Lower Gate Charge * Fast Switching Characteristic * Small Footprint & Low Profile Package D D D S 6 5 4 REF. A A1 A2 c D E E1 2604 Date Code G 1 2 3 D D G S Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current,[email protected] Continuous Drain Current,[email protected] Pulsed Drain Current 1,2 Total Power Dissipation V V 5.5 A o ID@TC=70C 4.4 A IDM 20 A 2 W 0.016 W/ C o PD@TC=25 C Linear Derating Factor Operating Junction and Storage Temperature Range 30 ± 20 ID@TC=25 C 3 Unit o VGS 3 Ratings Tj, Tstg o o C -55~+150 Thermal Data Symbol Parameter Thermal Resistance Junction-case 3 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Max. Rthj-c Ratings 62.5 Unit o C /W Any changing of specification will not be informed individual Page 1 of 4 STT2604 5.5A, 30V,RDS(ON) 45mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET o Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Symbol Min. Typ. BVDSS 30 _ _ V BVDS/ Tj _ 0.02 _ V/ C VGS(th) 1.0 _ 3.0 V IGSS _ _ ±100 nA VGS=±20V _ _ 1 uA VDS=30V,VGS=0 _ _ 25 uA VDS=24V,VGS=0 _ _ o Drain-Source Leakage Current (Tj=25 C ) o Drain-Source Leakage Current(Tj=55 C) Static Drain-Source On-Resistance 2 IDSS RD S (O N ) Max. o 45 _ _ 65 Total Gate Charge2 Qg _ 6 10 Gate-Source Charge Qgs _ 2 _ Gate-Drain ("Miller") Charge Qgd 3 _ 6 _ 8 _ 15 _ 4 _ 440 705 105 _ 35 _ Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Td(ON) _ Tr _ Td(Off) _ Tf _ Ciss Output Capacitance _ Coss _ _ Unit mΩ Test Condition VGS=0V, ID=250uA o Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=10V, ID=4.8A VGS=4.5V, ID=2.4A nC ID=4.8A VDS=24V VGS= 4.5V VDD=15V ID=1A nS VGS=10V RG=3.3Ω RD=15Ω pF VGS=0V VDS=25V f=1.0MHz Reverse Transfer Capacitance Crss _ Forward Transconductance Gfs _ 7 _ S VDS =10V, ID=4.8A Symbol Min. Typ. Max. Unit Test Condition Source-Drain Diode Parameter Forward On Voltage 2 2 Reverse Recovery Time Reverse Recovery Change VSD _ _ Trr _ 15 Q rr _ 7 1.2 _ _ V IS=4.8A, VGS=0V. nS IS=4.8A , VGS=0V. nC dl/dt=100A/us Notes: 1.Pulse width limited by safe operating area. 2.Pulse width≦300us, dutycycle≦2%. O 3.Surface mounted on 1 in2 copper pad of FR4 board; 156 C/W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 STT2604 Elektronische Bauelemente 5.5A, 30V,RDS(ON) 45mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of http://www.SeCoSGmbH.com/ Reverse Diode 01-Jun-2002 Rev. A Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page3 of 4 STT2604 Elektronische Bauelemente 5.5A, 30V,RDS(ON) 45mΩ N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual Page 4 of 4