DTC143TE/DTC143TUA/DTC143TKA DTC143TCA/TC143TSA Elektronische Bauelemente NPN Digital Transistors (Built-in Resistors) FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting input resistors (see equivalent circuit). * Only the on/off confitions need to be set for operation, making device design easy. * The bias resistors consis of thin-film resistors with compete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. PIN CONNENCTIONS AND MARKING DTC143TE SOT-523 DTC143TUA (1) Base (1)(1) Base Base (2) Emitter (2)(2) Emitter Emitter (3) Collector (3)(3) Collector Collector SOT-323 Abbreviated symbol: 03 DTC143TKA (1) Base Abbreviated symbol: 03 DTC143TCA DTA114ECA (1) Base (1) Base (2) Emitter (2) Emitter (3) Collector (3) Collector (2) Emitter (3) Collector SOT-23-3L SOT-23 Abbreviated symbol: 03 Abbreviated symbol: 03 DTC143TSA (1) Emitter (2) Collector (3) Base TO-92S http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A l Any changing of specification will not be informed individua Page 1 of 2 DTC143TE/DTC143TUA/DTC143TKA DTC143TCA/TC143TSA Elektronische Bauelemente NPN Digital Transistors (Built-in Resistors) Absolute maximum ratings(Ta=25℃) Parameter Limits (DTC143T□ ) Symbol E UA CA KA SA Unit V(BR)CBO 50 V Collector-emitter voltage V(BR)CEO 50 V Emitter-base V(BR)EBO 5 V Collector current IC 100 mA Collector Power dissipation PC Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Collector-base voltage voltage 150 200 300 mW Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions Collector-base breakdown voltage V(BR)CBO 50 V Ic=50µA Collector-emitter breakdown voltage V(BR)CEO 50 V Ic=1mA Emitter-base breakdown voltage V(BR)EBO 5 V IE=50µA Collector cut-off current ICBO 0.5 µA VCB=50V Emitter cut-off current IEBO 0.5 µA VEB=4V VCE(sat) 0.3 V IC=5mA,IB=0.25mA Collector-emitter saturation voltage DC current transfer ratio hFE 100 Input resistance R1 3.29 Transition frequency fT 600 4.7 250 6.11 VCE=5V,IC=1mA KΩ MHz VO=10V ,IO=5mA,f=100MHz Typical Characteristics http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individua Page 2 of 2