2N6661CSM4 MECHANICAL DATA N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 90V ID 0.9A RDS(on) 4.0Ω Dimensions in mm (inches) 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) 3 2 4 1 1.27 ± 0.05 (0.05 ± 0.002) 0.23 rad. (0.009) 0.64 ± 0.08 (0.025 ± 0.003) 3.81 ± 0.13 (0.15 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) 0.23 min. (0.009) FEATURES 2.03 ± 0.20 (0.08 ± 0.008) 1.02 ± 0.20 (0.04 ± 0.008) • • • • CERAMIC LCC3 PACKAGE (MO-041BA) PAD 1 – DRAIN PAD 2 – N/C (Underside View) PAD 3 – SOURCE PAD 4 – GATE ABSOLUTE MAXIMUM RATINGS T Faster switching Low Ciss Integral Source-Drain Diode High Input Impedance and High Gain DESCRIPTION This enhancement-mode (normally-off) vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High Reliability Screening options are available. CASE = 25°C unless otherwise stated VDS Drain - Source Voltage 90V ID Drain Current - Continuous (TC = 25°C) 0.9A - Continuous (TC = 100°C) 0.7A IDM Drain Current - Pulsed (Note 1) 3A VGS Gate - Source Voltage ±20V Ptot(1) Total Power Dissipation at Tmb ≤ 25°C 6.25W De-rate Linearly above 25°C Ptot(2) Total Power Dissipation at Tamb ≤ 25°C Tj,Tstg Operating and Storage Junction Temperature Range 0.050W/°C 0.5W -55 to +150°C THERMAL DATA Rthj-mb Thermal Resistance Junction – Mounting base Max 20 °C/W Rthj-amb Thermal Resistance Junction - Ambient Max 250 °C/W NOTES: 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width ≤ 380µS, Duty Cycle , δ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk DOC 3779, ISSUE 3 2N6661CSM4 STATIC ELECTRICAL RATINGS (T V(BR)DSS VGS(th) =25°C unless otherwise stated) Parameter Test Conditions Drain – Source Breakdown Voltage VGS = 0V ID = 1.0µA 90 - - VDS = VGS ID = 1.0mA 0.8 - 2 TC = 125°C 0.3 - - TC = -55°C - - 2.5 VDS = 0V - - ±100 TC = 125°C - - ±500 VGS = 0V - - 1.0 TC = 125°C - - 100 VDS = 15V VGS = 10V 1.5 - - VGS = 5V ID = 0.3A - - 5.3 VGS = 10V ID = 1.0A - - 4 TC = 125°C - - 7.5 VGS = 5V ID = 0.3A - - 1.6 VGS = 10V ID = 1.0A - - 4 TC = 125°C - - 7.5 Gate – Source threshold Voltage IGSS Gate – Source Leakage Current IDSS Zero Gate Voltage Drain Current ID(on) On – State Drain Current (note 2) RDS(on) Drain – Source On Resistance (note 3) VDS(on) case Drain – Source On Voltage (note 2) VGS = ±20V VDS = 72V Min. Typ. Max. Unit V nA µA A Ω V gFS Forward Transconductance (Note 2) VDS = 7.5V ID = 0.475A 170 - - ms VSD Diode Forward Voltage (Note 2) VGS = 0V Is = 0.86A 0.7 - 1.4 V - - 50 - - 40 - - 10 ID = 1A - - 10 (Note 2) - - 10 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Td(on) Turn-On Delay Td(off) Turn-Off Delay Time VDS = 25V f = 1.0MHz VDD = 25V RGS = 50Ω VGS = 0V pF ns Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk DOC 3779, ISSUE 3