IRFM MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET 1 3 .8 4 (.5 4 5 ) 1 .2 7 (.0 5 0 ) 1 .0 2 (.0 4 0 ) 1 3 .5 9 (.5 3 5 ) 6 .6 0 (.2 6 0 ) 6 .3 2 (.2 4 9 ) 6 .9 1 (.2 7 2 ) 6 .8 1 (.2 6 8 ) 3 .7 8 (.1 4 9 ) 3 .5 3 (.1 3 9 ) 2 0 .3 2 (.8 0 0 ) 2 0 .0 6 (.7 9 0 ) VDSS ID(cont) RDS(on) D IA 1 7 .4 0 (.6 8 5 ) 1 6 .8 9 (.6 6 5 ) 1 3 .8 4 (.5 4 5 ) 1 3 .5 9 (.5 3 5 ) G a te S o u rc e 4 .9 5 (.1 9 5 ) 4 .1 9 (.1 6 5 ) D r a in 1 .1 4 (.0 4 5 ) 0 .8 9 (0 .3 5 ) 9 .5 2 (.3 7 5 ) 8 .7 6 (.3 4 5 ) FEATURES • N–CHANNEL MOSFET R 1 .0 1 (.0 4 0 ) M IN 3 .8 1 (.1 5 0 ) B S C 200V 27.4A 0.100W D ia T y p 3 L e a d s • HIGH VOLTAGE • INTEGRAL PROTECTION DIODE • HERMETIC ISOLATED TO-254 PAC 3 .8 1 (.1 5 0 ) B S C • CERAMIC SURFACE MOUNT PACK OPTION TO–254 Metal Package Pin 1 – Drain Pin 2 – Source Pin 3 – Gate ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VGS Gate – Source Voltage ID Continuous Drain Current @ VGS = 10V , TC = 25°C @ VGS = 10V , TC = 100°C IDM Pulsed Drain Current PD Max. Power Dissipation @ TC = 25°C Linear Derating Factor IL Avalanche Current , Clamped 1 dv / dt Peak Diode Recovery 2 RqJC RqJA Thermal Resistance Junction – Case RqCS TJ , TSTG Thermal Resistance Case – Sink TL Lead Temperature (1.6mm from case for 10s) Thermal Resistance Junction – Ambient Operating Junction and Storage Temperature Range ±20V 27.4A 17A 110A 150W 1.2W / °C 27.4A 5.5V / ns 0.83°C / W 48°C / W 0.21°C / W typ. –55 to 150°C 300°C IRFM ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) ID = 1mA VGS(th) Gate Threshold Voltage 2 Max 0.28 ID = 1mA 2 Typ. 200 Reference to 25°C Static Drain – Source On–State Resistance VGS = 0 Min. VGS = 10V ID = 17A 0.100 VGS = 10V ID = 27.4A 0.105 VDS = VGS ID = 250mA 2 VDS ³ 15V IDS = 27.4A 9 VGS = 0 VDS = 0.8BVDSS 25 TJ = 125°C 250 4 gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V –100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance CDC Drain – Case Capacitance Qg Total Gate Charge VGS = 10V 55 115 Qgs Gate – Source Charge ID = 27.4A 8 22 Qgd Gate – Drain (“Miller”) Charge VDS = 0.5BVDSS 30 60 td(on) Turn– On Delay Time tr Rise Time td(off) Turn–Off Delay Time tf Fall Time IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current 3500 VGS = 0 700 VDS = 25V 110 f = 1MHz 12 35 VDD = 100V 190 ID = 27.4A 170 RG = 2.35W 130 27.4 1 ISM Pulse Source Current VSD Diode Forward Voltage 2 trr Reverse Recovery Time 2 110 IS = 27.4A TJ = 25°C 1.9 VGS = 0 IF = 27.4A 2 TJ = 25°C 950 di / dt £ 100A/ms VDD £ 50V 9.0 Qrr Reverse Recovery Charge ton Forward Turn–On Time LD PACKAGE CHARACTERISTICS Internal Drain Inductance Measured from 6mm down drain lead to centre of die 8.7 LS Internal Source Inductance 8.7 Negligible Measured from 6mm down source lead to source bond pad