BVDSS = 700 V RDS(on) typ = 10.3 Ω HFB1N70 ID = 0.3 A 700V N-Channel MOSFET TO-92 FEATURES 1 Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4 4.5 5 nC (Typ (Typ.)) 2 3 1.Gate 2. Drain 3. Source D G Extended Safe Operating Area Lower RDS(ON) : 10.3 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol S TC=25℃ unless otherwise specified Parameter Value Units 700 V VDSS Drain Source Voltage Drain-Source ID Drain Current – Continuous (TC = 25℃) 0.3 A Drain Current – Continuous (TC = 100℃) 0.18 A IDM Drain Current – Pulsed 1.2 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 33 mJ IAR Avalanche Current (Note 1) 03 0.3 A EAR Repetitive Avalanche Energy (Note 1) 0.25 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25℃) - Derate above 25℃ (Note 1) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 2.5 W 0.02 W/℃ -55 to +150 ℃ 300 ℃ Thermal Resistance Characteristics Symbol Parameter Typ. Max. RθJL Junction-to-Lead -- 50 RθJA Junction to Ambient Junction-to-Ambient -- 140 Units ℃/W ◎ SEMIHOW REV.A0,Apr 2006 HFB1N70 Jan 2007 Symbol y Parameter unless otherwise specified Test Conditions Min Typ y Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 0.15 A -- 10.3 14 Ω 700 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.65 -- V/℃ VDS = 700 V, VGS = 0 V -- -- 1 ㎂ VDS = 560 V, TC = 125℃ -- -- 10 ㎂ Off Characteristics BVDSS D i S Drain-Source Breakdown B kd V Voltage lt ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current VGS = 0 V V, ID = 250 ㎂ IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR G t B d L Gate-Body Leakage k C Current, t Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 150 195 ㎊ -- 15 20 ㎊ -- 3.5 4.5 ㎊ -- 12 30 ㎱ -- 40 140 ㎱ -- 20 60 ㎱ -- 30 80 ㎱ -- 4.5 6.0 nC -- 1.0 -- nC -- 2.5 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 300 V, ID = 0.8 A, RG = 25 Ω (Note 4,5) VDS = 560 V, ID = 0.8 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 0.3 ISM Pulsed Source-Drain Diode Forward Current -- -- 1.2 VSD Source-Drain Source Drain Diode Forward Voltage IS = 0.3 03A A, VGS = 0 V -- -- 14 1.4 V trr Reverse Recovery Time -- 160 -- ㎱ Qrr Reverse Recovery Charge IS = 0.8 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 0.45 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=96mH, IAS=0.8A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤0.3A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4 P 4. Pulse l T Testt : Pulse P l Width ≤ 300μs, 300 Duty D t C Cycle l ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Apr 2006 HFB1N70 Electrical Characteristics TC=25 °C HFB1N70 Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics RDS(on) , [Ω] Drain-So ource On-Resistance 60 VGS = 10V 50 40 VGS = 20V 30 20 10 o * Note : TJ = 25 C 0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 ID , Drain Current [A] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 12 Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 200 150 Coss 100 ※ Note ; 1. VGS = 0 V 2. f = 1 MHz Crss 50 0 -1 10 VDS = 350V 8 10 1 10 VDS = 560V 6 4 2 * Notes : ID = 0.8 A 0 0 VDS = 140V 10 VGS, Gate-Source e Voltage [V] 250 Capacitanc ces [pF] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 0 1 2 3 4 5 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,Apr 2006 (continued) 1.2 3.0 RDDS(ON), (Normalized) Drain-Source On-Resistance BV VDSS, (Normalized) Drain-So ource Breakdown Voltage HFB1N70 Typical Characteristics 1.1 1.0 * Note : 1. VGS = 0 V 0.9 2. ID = 250μA 2.5 2.0 1.5 1.0 * Note : 1. VGS = 10 V 0.5 2. ID = 0.15 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 0.4 Operation in This Area is Limited by R DS(on) 0 10 0.3 ID, Dra ain Current [A] ID, Dra ain Current [A] 100 μs 1 ms 10 ms 100 ms DC * Notes : o 1. TC = 25 C 0.2 0.1 o 2. TJ = 150 C 3. Single Pulse -1 0 10 1 2 10 0.0 25 3 10 10 50 75 125 150 o Figure 9. Maximum Safe Operating Area 10 100 TC, Case Temperature [ C] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs Case C T Temperature t 2 10 0 .2 1 * N o te s : o 1 . Z θ J C ( t) = 5 0 C /W M a x . 0 .1 2 . D u ty F a c to r , D = t 1 /t 2 0 .0 5 10 PDM 0 .0 2 0 0 .0 1 3 . T J M - T C = P D M * Z θ J C ( t) t1 s in g le p u ls e θJC (t), Thermal Res sponse D = 0 .5 Z 10 10 t2 -1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] Fi Figure 11. 11 Transient T i t Thermal Th l Response R Curve C ◎ SEMIHOW REV.A0,Apr 2006 HFB1N70 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT 200nF Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,Apr 2006 HFB1N70 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period G Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,Apr 2006 HFB1N70 Package Dimension TOTO -92 ±0 2 3 71±0.2 3.71 4.58±0.25 3° ±0 25 4 58±0.25 4.58 4° 14.47±0.5 0.46±0.1 1.27typ 3.6±0.25 1.02±0.1 3.71±0.25 1.27typ ◎ SEMIHOW REV.A0,Apr 2006 HFB1N70 W0 W W1 H0 H W2 H1 TOTO -92 TAPING D 0 F1 F2 P1 Item P P2 Symbol Dimension [mm] Reference Tolerance Component pitch P 12.7 ±0.5 Side lead to center of feed hole P1 3.85 ±0.5 Center lead to center of feed hole P2 6 35 6.35 ±0 5 ±0.5 FI,F2 2.5 +0.2/-0.1 Carrier Tape width W 18.0 +1.0/-0.5 Adhesive tape width W0 6.0 ±0.5 Tape feed hole location W1 9.0 ±0.5 Adhesive d es e tape pos position to W2 Lead pitch 1.0 MAX Center of feed hole to bottom of component H 19.5 ±1 Center of feed hole to lead form H0 16.0 ±0.5 Component height H1 Tape feed hole diameter D0 27.0 max 4.0 ±0.2 ◎ SEMIHOW REV.A0,Apr 2006