BVDSS = 700 V RDS(on) typ = 14.0 Ω HFC1N70 ID = 0.5 A 700V N-Channel MOSFET TO-126 FEATURES 1 Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 14.0 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 700 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 0.5 A Drain Current – Continuous (TC = 100℃) 0.35 A IDM Drain Current – Pulsed 2.0 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 33 mJ IAR Avalanche Current (Note 1) 0.5 A EAR Repetitive Avalanche Energy (Note 1) 0.75 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25℃) - Derate above 25℃ 7.5 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds (Note 1) 0.06 W/℃ -55 to +150 ℃ 300 ℃ * Drain current limited by junction temperature Thermal Resistance Characteristics Symbol Parameter Typ. Max. RθJC Junction-to-Case -- 17 RθJA Junction-to-Ambient -- 62.5 Units ℃/W ◎ SEMIHOW REV.A0,Dec 2008 HFC1N70 Dec 2008 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 0.25 A -- 14 17 Ω 700 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.65 -- V/℃ VDS = 700 V, VGS = 0 V -- -- 1 ㎂ VDS = 560 V, TC = 125℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 ㎂ IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 150 195 ㎊ -- 15 20 ㎊ -- 3.5 4.5 ㎊ -- 12 30 ㎱ -- 40 140 ㎱ -- 20 60 ㎱ -- 30 80 ㎱ -- 4.5 6.0 nC -- 1.0 -- nC -- 2.5 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 300 V, ID = 0.8 A, RG = 25 Ω (Note 4,5) VDS = 560 V, ID = 0.8 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 0.5 ISM Pulsed Source-Drain Diode Forward Current -- -- 2.0 VSD Source-Drain Diode Forward Voltage IS = 0.5 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 160 -- ㎱ Qrr Reverse Recovery Charge IS = 0.8 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 0.45 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=96mH, IAS=0.8A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤0.5A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Dec 2008 HFC1N70 Electrical Characteristics TC=25 °C HFC1N70 Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics RDS(on) , [Ω] Drain-Source On-Resistance 80 70 VGS = 10V 60 50 VGS = 20V 40 30 20 10 * Note : TJ = 25oC 0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 ID , Drain Current [A] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 12 Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 200 150 Coss 100 ※ Note ; 1. VGS = 0 V 2. f = 1 MHz Crss 50 VGS, Gate-Source Voltage [V] 250 Capacitances [pF] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature VDS = 140V 10 VDS = 350V 8 VDS = 560V 6 4 2 * Notes : ID = 0.8 A 0 -1 10 0 0 10 1 10 0 1 2 3 4 5 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,Dec 2008 (continued) 1.2 3.0 1.1 1.0 * Note : 1. VGS = 0 V 2. ID = 250µA 0.9 0.8 -100 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage HFC1N70 Typical Characteristics 150 2.0 1.5 1.0 * Note : 1. VGS = 10 V 2. ID = 0.3 A 0.5 0.0 -100 200 -50 0 50 100 150 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 101 200 0.5 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 10 1 ms 10 ms 100 ms 10-1 DC * Notes : 1. TC = 25 oC 0.3 0.2 0.1 2. TJ = 150 oC 3. Single Pulse 10-2 100 101 0.0 25 103 102 50 Figure 9. Maximum Safe Operating Area 1 10 75 100 125 150 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] Zθ JC(t), Thermal Response ID, Drain Current [A] 0.4 100 µs 0 Figure 10. Maximum Drain Current vs Case Temperature D=0.5 0.2 0.1 0 ※ Notes : 1. Zθ JC(t) = 17 ℃/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC(t) 0.05 10 0.02 0.01 single pulse PDM -1 10 t1 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,Dec 2008 HFC1N70 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,Dec 2008 HFC1N70 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,Dec 2008 HFC1N70 Package Dimension TO-126 8.5max 0.2 12max 3.8±0.2 φ 2.8max ± 3.2 13max 1.2±0.2 2.5±0.2 1.27typ 0.78±0.08 2.3max 0.5±0.1 2.3max ◎ SEMIHOW REV.A0,Dec 2008