SEMIHOW HFI50N06

BVDSS = 60 V
RDS(on) = 18 mΩ
HFW50N06 / HFI50N06
ID = 50 A
60V N-Channel MOSFET
D2-PAK
I2-PAK
FEATURES
 Originative New Design
HFW50N06
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
HFI50N06
1.Gate 2. Drain 3. Source
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 40 nC (Typ.)
 Extended Safe Operating Area
 Lower RDS(ON) : 0.018 Ω (Typ.) @VGS=10V
 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
TC=25℃ unless otherwise specified
Parameter
Value
Units
60
V
VDSS
Drain-Source Voltage
ID
Drain Current
– Continuous (TC = 25℃)
50
A
Drain Current
– Continuous (TC = 100℃)
35.4
A
IDM
Drain Current
– Pulsed
200
A
VGS
Gate-Source Voltage
±25
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
490
mJ
IAR
Avalanche Current
(Note 1)
50
A
EAR
Repetitive Avalanche Energy
(Note 1)
12
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
7.0
V/ns
PD
Power Dissipation (TA = 25℃)*
3.75
W
Power Dissipation (TC = 25℃)
- Derate above 25℃
120
W
0.8
W/℃
-55 to +175
℃
300
℃
(Note 1)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Typ.
Max.
RθJC
Symbol
Junction-to-Case
Parameter
--
1.24
Rθ JA
Junction-to-Ambient*
--
40
RθJA
Junction-to-Ambient
--
62.5
Units
℃/W
* When mounted on the minimum pad size recommended (PCB Mount)
◎ SEMIHOW REV.A0,Mar 2009
HFW50N06_HFI50N06
Nov 2009
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 ㎂
2.0
--
4.0
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 25 A
--
0.018
0.022
Ω
VGS = 0 V, ID = 250 ㎂
60
--
--
V
ID = 250 ㎂, Referenced to25℃
--
0.06
--
V/℃
VDS = 60 V, VGS = 0 V
--
--
1
㎂
VDS = 48 V, TC = 150℃
--
--
10
㎂
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS Breakdown Voltage Temperature
/ΔTJ
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 25 V, VDS = 0 V
--
--
100
㎁
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -25 V, VDS = 0 V
--
--
-100
㎁
--
1600
2100
㎊
--
600
780
㎊
--
90
120
㎊
--
15
40
㎱
--
105
220
㎱
--
60
130
㎱
--
65
140
㎱
--
40
52
nC
--
10
--
nC
--
17
--
nC
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 30 V, ID = 25 A,
RG = 25 Ω
(Note 4,5)
VDS = 48 V, ID = 50 A,
VGS = 10 V
(Note 4,5)
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
50
ISM
Pulsed Source-Drain Diode Forward Current
--
--
200
VSD
Source-Drain Diode Forward Voltage
IS = 50 A, VGS = 0 V
--
--
1.5
V
trr
Reverse Recovery Time
--
52
--
㎱
Qrr
Reverse Recovery Charge
IS = 50 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
75
--
μC
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=230μH, IAS=50A, VDD=25V, RG=25Ω, Starting TJ =25°C
3. ISD≤50A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Mar 2009
HFW50N06_HFI50N06
Electrical Characteristics TC=25 °C
HFW50N06_HFI50N06
ID, Drain Current [A]
ID, Drain Current [A]
Typical Characteristics
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
RDS(ON)[Ω],
Drain-Source On-Resistance
IDR, Reverse Drain Current [A]
Figure 2. Transfer Characteristics
ID, Drain Current [A]
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
3000
Ciss
2000
Coss
1500
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
1000
Crss
500
VDS = 30V
VGS, Gate-Source Voltage [V]
2500
Capacitances [pF]
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
VDS = 48V
8
6
4
2
※ Note : ID = 50 A
0
-1
10
0
0
10
1
10
0
10
20
30
40
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
50
◎ SEMIHOW REV.A0,Mar 2009
(continued)
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
1.2
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
HFW50N06_HFI50N06
Typical Characteristics
1.1
1.0
* Note :
1. VGS = 0 V
2. ID = 250 µA
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
∗ Note :
1. VGS = 10 V
2. ID = 25 A
0.5
0.0
-100
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
103
60
Operation in This Area
is Limited by R DS(on)
ID, Drain Current [A]
100 µs
102
1 ms
10 ms
DC
101
* Notes :
1. TC = 25 oC
40
30
20
10
2. TJ = 175 oC
3. Single Pulse
100
10-1
100
101
0
25
102
50
75
100
125
150
175
TC, Case Temperature [oc]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
100
Zθ JC(t), Thermal Response
ID, Drain Current [A]
50
D=0.5
* Notes :
1. ZθJC(t) = 1.24 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.2
0.1
10-1
0.05
0.02
0.01
10-2
10-5
PDM
t1
single pulse
10-4
10-3
10-2
10-1
t2
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,Mar 2009
HFW50N06_HFI50N06
Fig 12. Gate Charge Test Circuit & Waveform
50KΩ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
◎ SEMIHOW REV.A0,Mar 2009
HFW50N06_HFI50N06
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
◎ SEMIHOW REV.A0,Mar 2009
HFW50N06_HFI50N06
Package Dimension
◎ SEMIHOW REV.A0,Mar 2009
HFW50N06_HFI50N06
Package Dimension
◎ SEMIHOW REV.A0,Mar 2009