SEMIHOW HFP4N65

BVDSS = 650 V
RDS(on) typ = 2.3 Ω
HFP4N65
ID = 3.6 A
650V N-Channel MOSFET
TO-220
FEATURES
 Originative New Design
1
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
2
3
1.Gate 2. Drain 3. Source
D
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 15 nC (Typ.)
 Extended Safe Operating Area
G
 Lower RDS(ON) : 2.3 Ω (Typ.) @VGS=10V
 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
S
TC=25℃ unless otherwise specified
Parameter
Value
Units
650
V
VDSS
Drain-Source Voltage
ID
Drain Current
– Continuous (TC = 25℃)
3.6
A
Drain Current
– Continuous (TC = 100℃)
2.3
A
IDM
Drain Current
– Pulsed
14.4
A
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
240
mJ
IAR
Avalanche Current
(Note 1)
3.6
A
EAR
Repetitive Avalanche Energy
(Note 1)
10
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
PD
Power Dissipation (TC = 25℃)
- Derate above 25℃
100
W
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
(Note 1)
0.8
W/℃
-55 to +150
℃
300
℃
Thermal Resistance Characteristics
Typ.
Max.
RθJC
Symbol
Junction-to-Case
Parameter
--
1.25
RθCS
Case-to-Sink
0.5
--
RθJA
Junction-to-Ambient
--
62.5
Units
℃/W
◎ SEMIHOW REV.A0,April 2006
HFP4N65
April 2006
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 ㎂
2.5
--
4.5
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 1.8 A
--
2.3
2.9
Ω
VGS = 0 V, ID = 250 ㎂
650
--
--
V
ID = 250 ㎂, Referenced to25℃
--
0.65
--
V/℃
VDS = 650 V, VGS = 0 V
--
--
1
㎂
VDS = 520 V, TC = 125℃
--
--
10
㎂
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS Breakdown Voltage Temperature
Coefficient
/ΔTJ
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
㎁
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
㎁
--
620
810
㎊
--
64
83
㎊
--
10
13
㎊
--
15
30
㎱
--
40
80
㎱
--
50
100
㎱
--
40
80
㎱
--
15
20
nC
--
3.2
--
nC
--
6.8
--
nC
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 325 V, ID = 3.6 A,
RG = 25 Ω
(Note 4,5)
VDS = 520V, ID = 3.6 A,
VGS = 10 V
(Note 4,5)
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
3.6
ISM
Pulsed Source-Drain Diode Forward Current
--
--
14.4
VSD
Source-Drain Diode Forward Voltage
IS = 3.6 A, VGS = 0 V
--
--
1.4
V
trr
Reverse Recovery Time
--
300
--
㎱
Qrr
Reverse Recovery Charge
IS = 3.6 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
2.2
--
μC
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=34mH, IAS=3.6A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤3.6A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,April 2006
HFP4N65
Electrical Characteristics TC=25 °C
HFP4N65
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
RDS(on) , [Ω]
Drain-Source On-Resistance
8
7
VGS = 10V
6
5
VGS = 20V
4
3
2
1
※ Note : TJ = 25 ℃
0
2
4
6
8
10
12
14
ID , Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
800
Capacitances [pF]
700
Ciss
600
500
400
Coss
300
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
200
12
VDS = 130V
VGS, Gate-Source Voltage [V]
900
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
10
VDS = 325V
VDS = 520V
8
6
4
2
100
※ Note : ID = 3.6A
0
-1
10
0
0
10
1
10
0
2
4
6
8
10
12
14
16
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,April 2006
HFP4N65
Typical Characteristics
(continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
4
Operation in This Area
is Limited by R DS(on)
1
1 ms
10 ms
DC
0
10
-1
10
-2
10
0
10
3
2
1
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
1
0
25
3
2
10
10
10
50
75
100
125
150
TC, Case Temperature [ ℃]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
0
10
Zθ JC(t), Thermal Response
ID, Drain Current [A]
ID, Drain Current [A]
100 µs
10
D=0.5
0.2
※ Notes :
1. Zθ JC(t) = 1.25 ℃/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ JC(t)
0.1
-1
10
0.05
PDM
0.02
0.01
t1
single pulse
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
t2
0
10
1
10
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,April 2006
HFP4N65
Fig 12. Gate Charge Test Circuit & Waveform
50KΩ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
◎ SEMIHOW REV.A0,April 2006
HFP4N65
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
◎ SEMIHOW REV.A0,April 2006
HFP4N65
Package Dimension
TO-220 (A)
9.90±0.20
0.
0±
.6
20
4.50±0.20
6.50±0.20
9.19±0.20
2.80±0.20
1.27±0.20
1.52±0.20
1.30±0.20
2.40±0.20
3.02±0.20
13.08±0.20
15.70±0.20
φ3
0.80±0.20
2.54typ
2.54typ
0.50±0.20
◎ SEMIHOW REV.A0,April 2006
HFP4N65
TO-220 (B)
±0.20
84
4.57±0.20
6.30±0.20
1.27±0.20
9.14±0.20
2.74±0.20
15.44±0.20
.
φ3
0
.2
±0
1.27±0.20
2.67±0.20
13.28±0.20
2.67±0.20
0.81±0.20
2.54typ
2.54typ
0.40±0.20
◎ SEMIHOW REV.A0,April 2006