VDRM HTx12-600 = 600 V 3.Gate IT(RMS) = 12.0A 600V 12A TRIAC 2.T2 1.T1 1.T1 2. T2 3. Gate FEATURES Repetitive Peak Off-State Voltage: 600V R.M.S On-state Current (IT(RMS)=12A) High Commutation dv/dt HTP12-600 HTS12-600 General Description The TRIAC HTP12-600 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. Absolute Maximum Ratings (Ta=25℃) Symbol Parameter Value Units VDRM Repetitive Peak Off-State Voltage 600 V 12 A A R.M.S On-State Current (Ta = 100℃) HTP12-600 R.M.S On-State Current (Tc = 79℃) HTS12-600 Surge On-State Current (One Cycle, 50/60Hz, Peak, Non Repetitive) 50Hz 119 60Hz 130 IT(RMS) ITSM VGM Peak Gate Voltage 10 V IGM Peak Gate Current 2 A PGM Peak Gate Power Dissipation 5 W VISO Isolation Breakdown Boltate, AC RMS 1Min 1500 V TSTG Storage Temperature Range -40 to +125 ℃ Operating Temperature -40 to +125 ℃ Tj (HTS12-600 only) ◎ SEMIHOW REV.1.0 Jan 2006 HTx12-600 Symbol Symbol Parameter (Ta=25℃) Test Conditions Min Typ Max Units IGT Gate Trigger Current VD=6V, RL=10Ω 1+, 1-, 3- 30 mA VGT Gate Trigger Voltage VD=6V, RL=10Ω 1+, 1-, 3- 1.5 V VGD (dv/dt)c IH Non Trigger Gate Tj =125℃, VD=1/2VDRM Voltage Critical Rate of Rise of Tj =125℃, VD=2/3VDRM Off-State Voltage at (di/dt)c=-6A/ms Communication 0.2 V 10.0 V/uS Holding Current 20 VD=VDRM, Single Phase, IDRM Repetitive Peak OffState Current VTM Peak On-State Voltage IT=6A, Inst, Measurement mA 2.0 mA 1.4 V Max Units HTP16-600 1.8 ℃/W HTS16-600 3.3 ℃/W Half Wave, Tj=125℃ Thermal Characteristics Symbol Parameter Test Conditions RTH(J-C) Thermal Resistance Junction to Case Case Min Typ ◎ SEMIHOW REV.1.0 Jan 2006 HTx12-600 Electrical Characteristics HTx12-600 Performance Curves Fig 1. Gate Characteristics Fig 2.On-State Voltage 102 On-state Current (A) Gate Voltage (V) 101 100 101 100 10-1 101 102 0.5 103 1.0 1.5 Gate Current (mA) 2.5 3.0 3.5 Fig 4. On State Current vs. Maximum Power Dissipation Fig 3. Gate Trigger Voltage vs. Junction Temperature 16 Power Dissipation (W) 10 VGT (t℃) VGT (25℃) 2.0 On-state Voltage (V) 1 14 12 10 8 6 4 2 0 0.1 -50 0 50 100 0 150 4 6 8 10 12 14 Fig 6. Surge On-State Current Rating (Non-Repetitive) Fig 5. On State Current vs. Allowable Case Temperature 130 200 Surge On-State Current (A) Allowable Case Temp (℃) 2 RMS On-State Current (A) Junction Temperature (℃) 120 110 100 90 80 70 60 0 2 4 6 8 10 12 RMS On-State Current (A) 14 150 100 50 0 100 101 102 Time (Cycles) ◎ SEMIHOW REV.1.0 Jan 2006 10 Transient Thermal Impedance (℃/W) 10 IGT (t℃) IGT (25℃) HTx12-600 Fig8. Transient Thermal Impedance Fig 7. Gate Trigger Current vs. Junction Temperature 1 0.1 -50 0 50 100 150 1 0.1 10-2 100 10-1 Junction Temperature (℃) 101 102 Time (Sec) Fig 7. Gate Trigger Characteristics Test Circuit 10Ω 10Ω A RG A 6V RG 6V V V Test Procedure I Test Procedure II 10Ω A RG 6V V Test Procedure III ◎ SEMIHOW REV.1.0 Jan 2006 HTx12-600 Package Dimension HTP12-600 (TO-220) ◎ SEMIHOW REV.1.0 Jan 2006 HTx12-600 Package Dimensions HTS12-600 (TO-220F) Dimensions in Millimeters ◎ SEMIHOW REV.1.0 Jan 2006