SEMiX141KT16s Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 130 A Tc = 100 °C 98 A Tj = 25 °C 3600 A Tj = 130 °C 3000 A Tj = 25 °C 57800 A2s Tj = 130 °C 45000 A2s VRSM 1700 V VRRM 1600 V Chip IT(AV) ITSM i2t ® SEMiX 1s sinus 180° 10 ms 10 ms VDRM (di/dt)cr Tj = 130 °C Rectifier Thyr./Diode Module (dv/dt)cr Tj = 130 °C SEMiX141KT16s Tj 1600 V 200 A/µs 1000 V/µs -40 ... 130 °C Module Tstg Features Visol • Terminal height 17 mm • Chips soldered directly to isolated substrate Typical Applications • Input Bridge Rectifier for • AC/DC motor control • power supply AC sinus 50Hz -40 ... 125 °C 1 min 4000 V 1s 4800 V Characteristics Symbol Conditions VT min. max. Unit Tj = 25 °C, IT = 360 A 1.6 V VT(TO) Tj = 130 °C 0.85 V rT Tj = 130 °C 2.5 mΩ 60 mA IDD;IRD Tj = 130 °C, VDD = VDRM; VRD = VRRM tgd Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs typ. 1 µs tgr VD = 0.67 * VDRM tq Tj = 130 °C IH Tj = 25 °C 100 300 mA IL Tj = 25 °C, RG = 33 Ω 200 500 mA VGT Tj = 25 °C, d.c. 2 V IGT Tj = 25 °C, d.c. 150 mA VGD Tj = 130 °C, d.c. IGD Tj = 130 °C, d.c. µs µs 0.25 10 per thyristor Rth(j-c) 2 150 0.2 K/W per diode Rth(j-c) sin. 180° Rth(j-c) V mA K/W per thyristor 0.21 K/W per diode K/W per thyristor K/W per diode K/W Module Rth(c-s) K/W per module 0.075 K/W Ms to heat sink (M5) 3 5 Nm Mt to terminals (M6) 2.5 5 Nm 5 * 9,81 m/s2 a w 145 g KT © by SEMIKRON Rev. 0 – 15.09.2008 1 SEMiX141KT16s Fig. 1L: Power dissipation per thyristor/diode vs. on-state current Fig. 1R: Power dissipation per thyristor/diode vs. ambient temperature Fig. 2L: Power dissipation of one module vs. rms current Fig. 2R: Power dissipation of one module vs. case temperature Fig. 3L: Power dissipation of two modules vs. direct current Fig. 3R: Power dissipation of two modules vs. case temperature 2 Rev. 0 – 15.09.2008 © by SEMIKRON SEMiX141KT16s Fig. 4L: Power dissipation of three modules vs. direct current Fig. 4R: Power dissipation of three modules vs. case temperature Fig. 5: Recovered charge vs. current decrease Fig. 6: Transient thermal impedance vs. time Fig. 7: On-state characteristics Fig. 8: Surge overload current vs. time © by SEMIKRON Rev. 0 – 15.09.2008 3 SEMiX141KT16s Fig. 9: Gate trigger characteristics KT SEMiX 1s 4 Rev. 0 – 15.09.2008 © by SEMIKRON