SEMiX754GB128Ds Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 680 A Tc = 80°C 482 A 800 A -20 ... 20 V 10 µs -40 ... 150 °C Tc = 25°C 562 A Tc = 80°C 385 A ICRM = 2xICnom VGES SEMiX®4s SPT IGBT Modules tpsc Tj Inverse diode IF SEMiX754GB128Ds Preliminary Data VCC = 600V VGE ≤ 20V Tj = 125°C VCES ≤ 1200V Tj = 150°C IFRM IFRM = 2xIFnom 800 A IFSM tp = 10ms, half sine wave, Tj = 25°C 3100 A -40 ... 150 °C Tj Features • Homogeneous Si • SPT = Soft-Punch-Through technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications • AC inverter drives • UPS • Electronic welders up to 20 kHz Remarks Module It(RMS) Tstg Visol AC sinus 50Hz, t = 60s 600 A -40 ... 125 °C 4000 V Characteristics Symbol Conditions min. typ. max. Unit Tj = 25°C 1.9 2.35 V Tj = 125°C 2.10 2.55 V V IGBT VCE(sat) ICnom = 400A VGE = 15V chiplevel VCE0 rCE VGE = 15V Tj = 25°C 1 1.15 Tj = 125°C 0.9 1.05 V Tj = 25°C 2.3 3.0 mΩ Tj = 125°C 3.0 3.8 mΩ VGE(th) VGE=VCE, IC = 16mA ICES VGE = 0V VCE = 1200V Cies Coes Cres VCE = 25V VGE = 0V Tj = 25°C 4.5 5 6.5 V 0.2 0.6 mA Tj = 125°C mA f = 1MHz 37.7 nF f = 1MHz 2.48 nF f = 1MHz 1.56 nF QG VGE = - 8 V...+ 15 V 3840 nC RGint Tj = 25°C 1.00 Ω td(on) VCC = 600V ICnom = 400A Tj = 125°C RG on = 2.5Ω RG off = 2.5Ω 180 ns tr Eon td(off) tf Eoff Rth(j-c) per IGBT 88 ns 48 mJ 655 ns 120 ns 44 mJ 0.05 K/W GB © by SEMIKRON 03.04.2008 1 SEMiX754GB128Ds Characteristics Symbol Conditions Inverse diode VF = VEC IFnom = 400A VGE = 0V chiplevel VF0 rF SEMiX®4s IRRM Qrr SPT IGBT Modules Err Rth(j-c)D min. Tj = 25°C Tj = 125°C typ. max. Unit 2.0 2.5 V 1.8 2.3 V Tj = 25°C 0.75 1.1 1.45 V Tj = 125°C 0.5 0.85 1.2 V Tj = 25°C 1.9 2.3 2.6 mΩ 2.4 2.8 mΩ Tj = 125°C IFnom = 400A Tj = 125°C di/dtoff = 5800A/µs T = 125°C j VGE = -15V T j = 125°C VCC = 600V per diode 2.0 365 A 58 µC 22 mJ 0.082 K/W Module SEMiX754GB128Ds Preliminary Data LCE RCC'+EE' res., terminal-chip 22 nH TC = 25°C 0.7 mΩ TC = 125°C 1 mΩ Features Rth(c-s) per module • Homogeneous Si • SPT = Soft-Punch-Through technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Ms to heat sink (M5) 3 5 Nm Mt to terminals (M6) 2.5 5 Nm 400 g K/W w Temperature sensor R100 Tc=100°C (R25=5 kΩ) 0,493 ±5% kΩ B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550 ±2% K Typical Applications • AC inverter drives • UPS • Electronic welders up to 20 kHz 0.03 Remarks GB 2 03.04.2008 © by SEMIKRON SEMiX754GB128Ds Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic © by SEMIKRON 03.04.2008 3 SEMiX754GB128Ds Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 03.04.2008 © by SEMIKRON SEMiX754GB128Ds SEMiX 4s GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or gurantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON 03.04.2008 5