SEMiX151GD128Ds Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 154 A Tc = 80 °C 110 A 75 A ICnom ICRM SEMiX®13 tpsc SPT IGBT Modules ICRM = 2xICnom 150 A -20 ... 20 V 10 µs -40 ... 150 °C Tc = 25 °C 119 A Tc = 80 °C 82 A VGES VCC = 600 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1200 V Tj Inverse diode IF SEMiX151GD128Ds Preliminary Data Tj = 150 °C IFnom Features • Homogeneous Si • SPT = Soft-Punch-Through technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications • AC inverter drives • UPS • Electronic welders up to 20 kHz 75 A IFRM IFRM = 2xIFnom 150 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 720 A -40 ... 150 °C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 °C 1.9 2.3 V Tj = 125 °C 2.10 2.55 V V IGBT VCE(sat) IC = 75 A VGE = 15 V chiplevel VCE0 rCE VGE = 15 V VGE(th) VGE=VCE, IC = 3 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 25 °C 1 1.15 Tj = 125 °C 0.9 1.05 V Tj = 25 °C 12.0 15.3 mΩ 16.0 20.0 mΩ 5 6.5 V 0.1 0.3 mA Tj = 125 °C 4.5 Tj = 25 °C Tj = 125 °C mA f = 1 MHz 6.9 nF f = 1 MHz 0.46 nF f = 1 MHz 0.29 nF QG VGE = - 8 V...+ 15 V 710 nC RGint Tj = 25 °C 5.00 Ω td(on) VCC = 600 V IC = 75 A Tj = 125 °C RG on = 5.5 Ω RG off = 5.5 Ω 200 ns tr Eon td(off) tf Eoff Rth(j-c) per IGBT Rth(j-s) per IGBT 33 ns 7.9 mJ 330 ns 44 ns 7.9 mJ 0.19 K/W K/W GD © by SEMIKRON Rev. 9 – 02.12.2008 1 SEMiX151GD128Ds Characteristics Symbol Conditions Inverse diode VF = VEC IF = 75 A VGE = 0 V chiplevel VF0 SEMiX®13 rF min. typ. max. Unit Tj = 25 °C 2.0 2.5 V Tj = 125 °C 1.8 2.3 V V Tj = 25 °C 0.75 1.1 1.45 Tj = 125 °C 0.5 0.85 1.2 V Tj = 25 °C 10.0 12.0 14.0 mΩ 10.7 12.7 14.7 mΩ Rth(j-c) Tj = 125 °C IF = 75 A Tj = 125 °C di/dtoff = 2500 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VCC = 600 V per diode SEMiX151GD128Ds Rth(j-s) per diode Preliminary Data Module IRRM SPT IGBT Modules Qrr Err • Homogeneous Si • SPT = Soft-Punch-Through technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications • AC inverter drives • UPS • Electronic welders up to 20 kHz RCC'+EE' res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) µC 3.5 mJ K/W K/W TC = 25 °C TC = 125 °C to terminals (M6) Mt A 11 0.36 LCE Features 90 20 nH 0.7 mΩ 1 mΩ 0.04 K/W 3 5 Nm 2.5 5 Nm Nm w 350 g Temperature sensor R100 Tc=100°C (R25=5 kΩ) 0,493 ±5% kΩ B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550 ±2% K GD 2 Rev. 9 – 02.12.2008 © by SEMIKRON SEMiX151GD128Ds Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic © by SEMIKRON Rev. 9 – 02.12.2008 3 SEMiX151GD128Ds Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 Rev. 9 – 02.12.2008 © by SEMIKRON SEMiX151GD128Ds SEMiX 13 GD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 9 – 02.12.2008 5