SEMiX353GD176HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 353 A Tc = 80 °C 251 A 225 A ICnom ICRM SEMiX® 33c Trench IGBT Modules ICRM = 2xICnom 450 A -20 ... 20 V 10 µs -55 ... 150 °C Tc = 25 °C 428 A Tc = 80 °C 289 A 225 A VGES tpsc VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V Tj = 125 °C Tj Inverse diode IF SEMiX353GD176HDc Tj = 150 °C IFnom Features IFRM IFRM = 2xIFnom 450 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1800 A -40 ... 150 °C • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Module Typical Applications* Visol • AC inverter drives • UPS • Electronic welders Characteristics Tj It(RMS) Tstg Symbol AC sinus 50Hz, t = 1 min Conditions min. 600 A -40 ... 125 °C 4000 V typ. max. Unit Tj = 25 °C 2 2.45 V Tj = 125 °C 2.45 2.9 V Tj = 25 °C 1 1.2 V Tj = 125 °C 0.9 1.1 V Tj = 25 °C 4.4 5.6 mΩ 6.9 8.0 mΩ 5.8 6.4 V 0.1 0.3 mA IGBT VCE(sat) IC = 225 A VGE = 15 V chiplevel VCE0 rCE VGE = 15 V VGE(th) VGE=VCE, IC = 9 mA ICES VGE = 0 V VCE = 1700 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C td(on) tr Eon td(off) tf VCC = 1200 V IC = 225 A RG on = 5.6 Ω RG off = 5.6 Ω Eoff Rth(j-c) Tj = 125 °C 5.2 Tj = 25 °C Tj = 125 °C mA f = 1 MHz 19.9 nF f = 1 MHz 0.83 nF f = 1 MHz Tj = 125 °C 0.66 nF 2100 nC 2.83 Ω 250 ns Tj = 125 °C 75 ns Tj = 125 °C 155 mJ Tj = 125 °C 930 ns Tj = 125 °C 180 ns Tj = 125 °C 85 per IGBT mJ 0.086 K/W GD © by SEMIKRON Rev. 10 – 16.12.2009 1 SEMiX353GD176HDc Characteristics Symbol Conditions Inverse diode VF = VEC IF = 225 A VGE = 0 V chip VF0 rF SEMiX® 33c IRRM Qrr Trench IGBT Modules Err Rth(j-c) SEMiX353GD176HDc • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders Tj = 25 °C Tj = 125 °C typ. max. Unit 1.6 1.75 V 1.5 1.7 V Tj = 25 °C 0.9 1.1 1.3 V Tj = 125 °C 0.7 0.9 1.1 V Tj = 25 °C 2.0 2.0 2.0 mΩ 2.7 2.7 mΩ Tj = 125 °C IF = 225 A Tj = 125 °C di/dtoff = 4000 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VCC = 1200 V per diode 2.7 280 A 83 µC 45 mJ 0.13 K/W Module LCE RCC'+EE' Features min. res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) 20 nH TC = 25 °C 0.7 mΩ TC = 125 °C 1 mΩ 0.014 to terminals (M6) Mt K/W 3 5 Nm 2.5 5 Nm Nm w 900 g Temperatur Sensor R100 Tc=100°C (R25=5 kΩ) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% Ω 3550 ±2% K GD 2 Rev. 10 – 16.12.2009 © by SEMIKRON SEMiX353GD176HDc Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 10 – 16.12.2009 3 SEMiX353GD176HDc Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 10 – 16.12.2009 © by SEMIKRON SEMiX353GD176HDc SEMiX 33c pinout This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 10 – 16.12.2009 5