TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 DEVICES LEVELS 1N5768 JAN JANTX JANTXV DESCRIPTION These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to the positive side of the power supply line (see figure 1). This circuit application is further complimented by the 1N5770 (separate data sheet) that has a common anode. An external TVS diode may be added between the positive supply line and ground to prevent overvoltage on the supply rail. They may also be used in fast switching core-driver applications. This includes computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding applications. These arrays offer many advantages of integrated circuits such as high-density packaging and improved reliability. This is a result of fewer pick and place operations, smaller footprint, smaller weight, and elimination of various discrete packages that may not be as user friendly in PC board mounting. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com 10-PIN Ceramic Flat Pack FEATURES ¾ Hermetic Ceramic Package ¾ Isolated Diodes to Eliminate Cross-Talk Voltages ¾ High Breakdown Voltage VBR > 60 V at 10 μA ¾ Low Leakage IR< 100nA at 40 V ¾ Low Capacitance C < 4.0 pF ¾ Options for screening in accordance with MIL-PRF-19500/474 for JAN, JANTX, JANTXV, the prefixes respectively to part numbers. T4-LDS-0078 Rev. 1 (082463) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 APPLICATIONS / BENEFITS ¾ High Frequency Data Lines ¾ RS-232 & RS-422 Interface Networks ¾ Ethernet: 10 Base T ¾ Computer I/O Ports ¾ LAN ¾ Switching Core Drivers ¾ IEC 61000-4 Compatible (see circuit in figure 1) 61000-4-2 ESD : Air 15kV, contact 8kW 61000-4-4 (EFT) : 40A – 5/50 ns 61000-4-5 (surge): 12A 8/20 μs MAXIMUM RATINGS ¾ VBR Reverse Breakdown Voltage 60 V min (Notes 1 & 2) ¾ IO Continuous Forward Current 300 mA (Notes 1 & 3) ¾ IFSM Forward Surge Current (tp=1/120 s) 500 mA (Note 1) ¾ 400 mW Power Dissipation per Junction @ 25oC ¾ 500 mW Power Dissipation per Package @ 25oC (Note 4) ¾ Operating Junction Temperature range –65 to +150oC ¾ Storage Temperature range of –65 to +200oC NOTE 1: NOTE 2: NOTE 3: NOTE 4: Each Diode Pulsed: PW = 100 ms max; duty cycle <20% Derate at 2.4 mA/°C above +25°C Derate at 4.0 mW/°C above +25°C MECHANICAL AND PACKAGING ¾ 10-PIN Ceramic Flat Pack ¾ Weight 0.25 grams (approximate) ¾ Marking: Logo, part number, date code and dot identifying pin #1 ¾ Carrier Tubes; 19 pcs (standard) T4-LDS-0078 Rev. 1 (082463) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified IR1 VR = 40 V MAXIMUM CAPACITANCE (PIN TO PIN) Ct VR = 0 V F = 1 MHz MAXIMUM FORWARD RECOVERY TIME tfr IF = 500 mA MAXIMUM REVERSE RECOVERY TIME trr IF = IR = 200 mA Irr = 20 mA RL = 100 ohms Vdc μAdc pF ns ns 1.5 0.1 4.0 40 20 MAXIMUM FORWARD VOLTAGE VF1 IF = 100 mA (Note 1) MAXIMUM FORWARD VOLTAGE VF2 IF = 500 mA (Note 1) MAXIMUM REVERSE CURRENT PART NUMBER Vdc 1N5768 1 NOTE 1: Pulsed: PW = 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge. SYMBOLS & DEFINITIONS Symbol DEFINITION VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. IR Maximum Reverse Current: The maximum reverse current that will flow at the specified voltage and temperature. IFSM Ct Forward Surge Current: The peak forward surge current at a specified pulse width Capacitance: The capacitance of the diode as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads. T4-LDS-0078 Rev. 1 (082463) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 SCHEMATIC CIRCUIT Supply rail (+VCC) I/O Port GND (or -VCC) STEERING DIODE APPLICATION FIGURE 1 PACKAGE DIMENSIONS .290 MAX .005 MIN .019 .010 .006 .003 .370 .240 5 4 3 2 1 .125 MIN .280 MAX 6 7 8 9 10 .370 .240 .045 MAX .050 BSC T4-LDS-0078 Rev. 1 (082463) .050 .005 .095 Page 4 of 4