SKM 300GB125D
5 .6 7'" #
Absolute Maximum Ratings
Symbol Conditions
IGBT
8'4
9 5 .6 7'
'
9 5 +6, 7'
'2=
+.,,
8
;,,
(
5 <, 7'
.+,
(
?,,
(
@ .,
8
+,
E
5 .6 7'
.A,
(
5 <, 7'
+<,
(
?,,
(
+<,,
(
6,,
(
?,FFFG +6,
7'
?,FFFG +.6
7'
?,,,
8
'2=5.>'
Ultra Fast IGBT Module
SKM 300GB125D
8'' 5 A,, 8B 84 C ., 8B
8'4 D +.,, 8
Units
5 .6 7'
84
SEMITRANS® 3
Values
9 5 +.6 7'
Inverse Diode
$
9 5 +6, 7'
$2=
$2=5.>$
$=
5 +, B F
9 5 +6, 7'
Module
*2=&9
Features
!" #
$ % # & '( )' ) ' !
*+, - *., -
Typical Applications
# / ., 01
2
& +,, 01
& 3 3
# / ., 01
4
# / ., 01
8
('" + F
5 .6 7'" #
Characteristics
Symbol Conditions
IGBT
84*-
84 5 8'4" ' 5 < (
'4
84 5 , 8" 8'4 5 8'4
8'4,
'4
8'4*'
'
84 5 +6 8
typ.
max.
Units
?"6
6"6
A"6
8
9 5 .6 7'
,"+
,";
(
9 5 .6 7'
+"6
+"H6
8
9 5 +.6 7'
+"H
9 5 .67'
I
9 5 +.67'
++"6
8
+,"6
J
;";
;"<6
8
8'4 5 .6" 84 5 , 8
+<
."6
.?
;".
$
$
+
+";
$
K
84 5 ,8 G.,8
2
9 5 7'
# 5 + =1
2
5 ; J
2## 5 ; J
.,,,
8'' 5 A,,8
'5 .,,(
9 5 +.6 7'
84 5 @ +68
'
."6
L
+;,
?,
+A
?A,
;,
M
4##
2*9-
J
'
5 .,, (" 84 5 +6 8 9 5 7'&F
'
*
4
*###
min.
M
,",H6
NOP
GB
1
03-06-2009 NOS
© by SEMIKRON
SKM 300GB125D
Characteristics
Symbol Conditions
Inverse Diode
8$ 5 84'
$
5 .,, (B 84 5 , 8
8$,
min.
typ.
max.
Units
9 5 .6 7'&F
.
."6
8
9 5 +.6 7'&F
+"<
9 5 .6 7'
+"+
8
+".
9 5 +.6 7'
$
®
SEMITRANS 3
Ultra Fast IGBT Module
8
9 5 .6 7'
?"6
A"6
9 5 +.6 7'
22=
K
$ 5 .,, (
O 5 <,,, (OE
4
84 5 , 8B 8'' 5 A,, 8
2*9-)
8
J
J
9 5 +.6 7'
;?,
?A
(
E'
M
,"+<
NOP
.,
Module
SKM 300GB125D
Features
!" #
$ % # & '( )' ) ' !
*+, - *., -
'4
2''QG44Q
+6
F" 5 .6 7'
,";6
J
5 +.6 7'
,"6
J
2*-
=
0 =A
;
=
=A
."6
,",;<
NOP
6
6
;.6
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Typical Applications
# / ., 01
2
& +,, 01
& 3 3
# / ., 01
4
# / ., 01
GB
2
03-06-2009 NOS
© by SEMIKRON
SKM 300GB125D
SEMITRANS® 3
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
2
2
2
2
5+
5.
5;
5?
5+
5.
5;
6;
+<"6
;"+
?
,",?
,",+<I
,",,+H
0OP
0OP
0OP
0OP
5?
,",,;
2
2
2
2
5+
5.
5;
5?
5+
5.
5;
++6
6.
++
.
,",;AA
,",++;
,",,;
0OP
0OP
0OP
0OP
5?
,",,,.
Zth(j-c)D
Ultra Fast IGBT Module
SKM 300GB125D
Features
!" #
$ % # & '( )' ) ' !
*+, - *., -
Typical Applications
# / ., 01
2
& +,, 01
& 3 3
# / ., 01
4
# / ., 01
GB
3
03-06-2009 NOS
© by SEMIKRON
SKM 300GB125D
Fig. 1 Typ. output characteristic, tp = 80 µs; 125 °C
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic, tp = 80 µs; VCE = 20 V
Fig. 6 Typ. gate charge characteristic
4
03-06-2009 NOS
© by SEMIKRON
SKM 300GB125D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
03-06-2009 NOS
© by SEMIKRON
SKM 300GB125D
UL Recognized
File 63 532
' ) 6A
6
' ) 6A
03-06-2009 NOS
© by SEMIKRON