SKM 600GA176D
Absolute Maximum Ratings
Symbol Conditions
IGBT
3 2( 1
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Trench IGBT Modules
SKM 600GA176D
Units
2( 1
9
SEMITRANS® 4
Values
02,, ; 9 / 2, ; 3 02( 1
< 0),, Inverse Diode
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Module
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Features
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Typical Applications
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Remarks
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Characteristics
Symbol Conditions
IGBT
9
9 " % 0# &
%
9 , " ,
9 0( 2(1" '
min.
typ.
max.
Units
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3 2( 1
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&
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02,,
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3 02( 1
9 :0(
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GA
1
06-10-2009 NOS
© by SEMIKRON
SKM 600GA176D
Characteristics
Symbol Conditions
Inverse Diode
> SEMITRANS® 4
Trench IGBT Modules
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6,, &; 9 , min.
typ.
max.
Units
3 2( 1?
0"#
0"+
3 02( 1?
0"#
0"+
>,
3 2( 1
0"0
0"@
>
3 2( 1
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B
3 02( 1
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=
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Module
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SKM 600GA176D
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8
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B
02( 1
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B
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M
2"( 0"0
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M
@@,
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
!" # $ %
Typical Applications
& ' ()( *
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
)+, &
-! $
Remarks
%. / (,, & ' 0,,1
GA
2
06-10-2009 NOS
© by SEMIKRON
SKM 600GA176D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
06-10-2009 NOS
© by SEMIKRON
SKM 600GA176D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
4
06-10-2009 NOS
© by SEMIKRON
SKM 600GA176D
UL Recognized
File no. 63 532
. (+
9&
5
.(+
06-10-2009 NOS
© by SEMIKRON