SKM 800GA176D 3& 2 % Absolute Maximum Ratings Symbol Conditions IGBT 4 3& 2 # 4 1&) 2 #9: 1')) 67) $ 6) 2 &8) $ 13)) $ < 3) 1) ? 3& 2 !7) $ 6) 2 AA) $ 13)) $ 7!)) $ &)) $ ( A) ,,, B 1&) 2 ( A) ,,, B 13& 2 A))) #9:3"# Trench IGBT Modules SKM 800GA176D Units 3& 2 ; SEMITRANS® 4 Values 13)) = ; 0 3) = 4 13& 2 > 1')) Inverse Diode #@ 4 1&) 2 #@9: #@9:3"#@ #@: 1) = , 4 1&) 2 Module #+9:4 Features ! " # Typical Applications $ % &'& ( '&) $ * +" ,. % Remarks #/ 0 &)) $ % 1)) 2 $ 1 , 3& 2 % Characteristics Symbol Conditions IGBT ;+- ; # 3A $ # ; ) ) + ; 1& min. typ. max. Units &3 &6 !A 4 3& 2 )3 )! $ 4 3& 2 1 13 4 13& 2 )8 11 4 3&2 1' 31 C 4 13&2 3& # !)) $ ; 1& 4 3&2, 3& ; ) 3 A& 4 13&2, 3 A& 38 1 :D 78 ! 33 @ @ 3& @ A6)) 37) 8) 77& 1)7) 1!) F 3A& F E; %+ %+ ; (6,,,B1& 9; 7 C 9; 7 C 9+4(- #;G C 3 13)) # !))$ 4 13& 2 ; < 1& ) )A HI. GA 1 06-10-2009 NOS © by SEMIKRON SKM 800GA176D Characteristics Symbol Conditions Inverse Diode @ SEMITRANS® 4 Trench IGBT Modules #@ !)) $= ; ) min. typ. max. Units 4 3& 2, 1! 18 4 13& 2, 1! @) 4 3& 2 11 17 @ 4 3& 2 ) 67 1 C 4 13& 2 !&) 37) $ ? 1&& F #99: E #@ !)) $ %I% !A)) $I? ; (1& = 13)) 9+4(-/ %% ) )' 9KBK 1& , ( SKM 800GA176D 9+(- % : L :! : :! +:A- ! " # Typical Applications $ % &'& ( HI. Module J Features 3) 3& 2 ) 16 C 13& 2 ) 33 C ) )76 HI. 7 & M 3 & +1 1- & +3- M 77) This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. '&) $ * +" ,. % Remarks #/ 0 &)) $ % 1)) 2 GA 2 06-10-2009 NOS © by SEMIKRON SKM 800GA176D SEMITRANS® 4 Zth Symbol Zth(j-c)l Conditions Values Units 9 9 9 9 1 3 7 A 1 3 7 36 8& 3 1' ) 77 ) )AA' ) )3 ) ))1& LI. LI. LI. LI. A ) ))3& 9 9 9 9 1 3 7 A 1 3 7 A! 1' &8 11 ) )& ) ))'& ) ))3 LI. LI. LI. LI. A ) )))3 Zth(j-c)D Trench IGBT Modules SKM 800GA176D Features ! " # Typical Applications $ % &'& ( '&) $ * +" ,. % Remarks #/ 0 &)) $ % 1)) 2 GA 3 06-10-2009 NOS © by SEMIKRON SKM 800GA176D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 06-10-2009 NOS © by SEMIKRON SKM 800GA176D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 Typ. CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 06-10-2009 NOS © by SEMIKRON SKM 800GA176D UL Recognized File no. E 63 532 / &8 ;$ 6 / &8 06-10-2009 NOS © by SEMIKRON