SEMTECH_ELEC 1N4148

1N4148
SILICON EPITAXIAL PLANAR DIODE
Fast Switching Diode
This diode is also available in MiniMELF case
with the type designation LL4148
Max. 0.5
Max. 0.45
Min. 27.5
Max. 1.9
Min. 27.5
Max. 1.9
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
Black
Cathode Band
XXX
Black
Part No.
Max. 3.9
ST
XXX
Min. 27.5
Min. 27.5
Glass Case DO-34
Dimensions in mm
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Max. 2.9
Symbol
Value
Unit
Peak Reverse Voltage
VRM
100
V
Reverse Voltage
VR
75
V
IF(AV)
200
mA
IFSM
0.5
1
4
A
Ptot
500
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
at t = 1 s
at t = 1 ms
at t = 1 µs
Power Dissipation
1)
mW
Junction Temperature
Tj
200
O
Storage Temperature Range
TS
- 65 to + 200
O
1)
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 15/09/2007
C
C
1N4148
Characteristics at Tj = 25 OC
Parameter
Symbol
Min.
Max.
Unit
VF
-
1
V
IR
IR
IR
-
25
5
50
nA
µA
µA
V(BR)R
V(BR)R
100
75
-
V
V
Capacitance
at VF = VR = 0
Ctot
-
4
pF
Voltage Rise when Switching ON
tested with 50 mA Forward Pulses
tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz
Vfr
-
2.5
V
Reverse Recovery Time
from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω
trr
-
4
ns
RthA
-
0.35 1)
K/mW
ηV
0.45
-
-
Forward Voltage
at IF = 10 mA
Leakage Current
at VR = 20 V
at VR = 75 V
at VR = 20 V, Tj = 150 OC
Reverse Breakdown Voltage
at IR = 100 µA
at IR = 5 µA
Thermal Resistance Junction to Ambient Air
Rectification Efficiency
at f = 100 MHz, VRF = 2 V
Vo
2nF
5K
~
~
~
VRF =2V
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
60
1)
Rectification Efficiency Measurement Circuit
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 15/09/2007
1N4148
Dynamic forward resistance
versus forward current
Forward characteristics
mA
10
1N 4148
1N 4148
3
10 4
Tj=25 oC
f=1KHz
5
2
10 2
o
Tj=100 C
iF
10 3
o
Tj=25 C
rf
10
5
2
10 2
5
1
2
10
10 -1
5
2
10 -2
0
1
2V
1
10 -1
10 -2
1
10 2 mA
10
VF
IF
Admissible power dissipation
versus ambient temperature
Relative capacitance
versus reverse voltage
Valid provided that leads at a distance of 8 mm from case
are kept at ambient temperature
mW
1000
1N 4148
Tj=25 oC
f=1MHz
900
1.1
800
P tot
1N 4148
Ctot(VR )
Ctot(0V)
700
1.0
600
500
0.9
400
300
0.8
200
100
0.7
0
0
200 oC
100
0
0
Tamb
2
4
6
8
10 V
VR
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 15/09/2007
1N4148
Leakage current
versus junction temperature
nA
10 4
1N 4148
5
2
10 3
IR
5
2
10 2
5
2
10
5
VR=20V
2
1
0
o
200 C
100
Tj
Admissible repetitive peak forward current
versus pulse duration
A
100
Valid provided that leads at a distance of 8 mm from case
are kept at ambient temperature
1N 4148
v=tp/T
I
5
4
3
IFRM
2
tp
10
IFRM
T=1/fp
t
v=0
T
5
4
3
0.1
2
0.2
1
0.5
5
4
3
2
0.1
10 -5
2
5
10 -4
2
5
10 -3
2
5
10 -2
2
5
10 -1
2
5
1
2
5
10 s
tp
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 15/09/2007