1N4531, 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 75 V Continuous Reverse Voltage VR 75 V Continuous Forward Current IF 200 mA IFRM 450 mA IFSM 4 1 0.5 A Ptot 500 mW Junction Temperature Tj 200 O Storage Temperature Range TS - 65 to + 200 O Symbol Max. Unit VF 1 V 1N4531 1N4532 1N4531 1N4532 IR IR IR IR 25 100 50 100 nA nA µA µA 1N4531 1N4532 Cd Cd 4 2 pF pF 1N4531 1N4532 1N4532 trr trr trr 4 2 4 ns ns ns Vfr 3 V RthJA 350 K/W Repetitive Peak Reverse Voltage Repetitive Peak Forward Current Non-repetitive Peak Forward Current at t = 1 µs at t = 1 ms at t = 1 s Power Dissipation C C Characteristics at Tj = 25 OC Parameter Forward Voltage at IF = 10 mA Reverse Current at VR = 20 V at VR = 50 V at VR = 20 V, Tj = 150 OC at VR = 50 V, Tj = 150 OC Diode Capacitance at f = 1 MHz Reverse Recovery Time at IF = 10 mA, IR = 60 mA, RL = 100 Ω at IF = 10 mA, IR = 10 mA, RL = 100 Ω Forward Recovery Voltage at IF = 100 mA, tr ≤ 30 ns Thermal Resistance from Junction to Ambient SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2007