1N6263WT SILICON SCHOTTKY BARRIER DIODE for general purpose applications PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 I Top View Marking Code: "I" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 40 V Power Dissipation Ptot 400 mW Max. Single Cycle Surge Forward Current (10 s Square wave) IFSM 2 A Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O Peak Reverse Voltage C C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit V(BR)R 40 - V Forward Voltage at IF = 1 mA at IF = 15 mA VF - 0.39 0.9 V Reverse Leakage Current at VR = 30 V IR - 200 nA Ctot - 2.2 pF trr - 1 ns Reverse Breakdown Voltage at IR = 10 µA Junction Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = IR = 5 mA, recover to 0.1 IR SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 1N6263WT PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 ALL ROUND C A ∠ HE D E bp A UNIT A bp C D E HE V mm 0.70 0.60 0.4 0.3 0.135 0.127 1.25 1.15 0.85 0.75 1.7 1.5 0.1 ∠ 5 O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006