1SS352 SILICON EPITAXIAL PLANAR DIODE Features • Low forward voltage • Fast Reverse Recovery Time • Small Total Capacitance PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W2 Application • Ultra high speed switching Absolute Maximum Ratings (Ta = 25 OC) Parameter Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Symbol Value Unit Maximum (Peak) Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Average Forward Current IO 100 mA Maximum (Peak) Forward Current IFM 200 mA Surge Forward Current (10 ms) IFSM 1 A Power Dissipation Ptot 200 mW Tj 125 O Tstg - 55 to + 125 O Symbol Max. Unit Forward Voltage at IF = 100 mA VF 1.2 V Reverse Current at VR = 30 V at VR = 80 V IR 0.1 0.5 µA Total Capacitance at f = 1 MHz CT 3 pF Reverse Recovery Time at IF = 10 mA trr 4 ns Junction Temperature Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/04/2009 1SS352 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/04/2009 1SS352 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE A D E bp UNIT A bp C D E HE mm 1.10 0.80 0.40 0.25 0.15 0.00 1.80 1.60 1.35 1.15 2.80 2.30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/04/2009