1SS404WS SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Applications • High speed switching PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 R9 Top View Marking Code: "R9" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum (Peak) Reverse Voltage VRM 25 V Reverse Voltage VR 20 V Average Forward Current IO 300 mA Maximum (Peak) Forward Current IFM 700 mA Power Dissipation Ptot 200 mW Junction Temperature TJ 125 O Storage Temperature Range Ts - 55 to + 125 O C C Characteristics at Ta = 25 OC Parameter Symbol Typ. Max. Unit Forward Voltage at IF = 300 mA VF - 0.45 V Reverse Current at VR = 20 V IR - 50 µA Total Capacitance at f = 1 MHz CT 46 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 1SS404WS SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 1SS404WS PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE A D E bp UNIT A bp C D E HE mm 1.10 0.80 0.40 0.25 0.15 0.00 1.80 1.60 1.35 1.15 2.80 2.30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006