BC182…BC184 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier applications 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage BC182 BC183, BC184 VCBO 60 45 V Collector Emitter Voltage BC182 BC183, BC184 VCEO 50 30 V VEBO 6 V IC 100 mA Ptot 350 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O Emitter Base Voltage Collector Current Total Power Dissipation C C Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 10 µA at VCE = 5 V, IC = 2 mA at VCE = 5 V, IC = 100 mA Collector Base Cutoff Current at VCB = 50 V at VCB = 30 V Emitter Base Cutoff Current at VEB = 4 V Symbol Min. Max. Unit BC182, BC183 BC184 BC182 BC183 BC184 BC182, BC183 BC184 hFE hFE hFE hFE hFE hFE hFE 40 100 120 120 250 80 130 500 800 800 - - BC182 BC183, BC184 ICBO - 15 15 nA IEBO - 15 nA Collector Base Breakdown Voltage at IC = 10 µA BC182 BC183, BC184 V(BR)CBO 60 45 - V Collector Emitter Breakdown Voltage at IC = 2 mA BC182 BC183, BC184 V(BR)CEO 50 30 - V V(BR)EBO 6 - V Emitter Base Breakdown Voltage at IE = 100 µA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/12/2007 BC182…BC184 Characteristics at Ta = 25 OC Parameter Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA Base Emitter Saturation Voltage at IC = 100 mA, IB = 5 mA Base Emitter On Voltage at VCE = 5 V, IC = 2 mA Symbol Min. Max. Unit VCE(sat) - 0.25 0.6 V VBE(sat) - 1.2 V VBE(on) 0.55 0.7 V fT 150 - MHz Cob - 5 pF Current Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/12/2007