BC337…BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications These types are subdivided into three groups -16, -25 and -40, according to their DC current gain. 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol BC337 BC338 Unit Collector Base Voltage VCBO 50 30 V Collector Emitter Voltage VCEO 45 25 V Emitter Base Voltage VEBO 5 V Collector Current IC 800 mA Peak Collector Current ICM 1 A Total Power Dissipation Ptot 625 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 100 mA Symbol Min. Typ. Max. Unit -16 -25 -40 -16 -25 -40 hFE hFE hFE hFE hFE hFE 100 160 250 60 100 170 - 250 400 630 - - BC337 BC338 BC337 BC338 ICBO - 100 100 - nA V(BR)CBO 50 30 BC337 BC338 V(BR)CEO 45 25 - - V V(BR)EBO 5 - - V VCE(sat) - - 0.7 V VBE(on) - - 1.2 V fT - 100 - MHz CCBO - 12 - pF Current Gain Group at VCE = 1 V, IC = 300 mA Collector Base Cutoff Current at VCB = 50 V at VCB = 30 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 2 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter On Voltage at VCE = 1 V, IC = 300 mA Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 50 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/12/2007 V BC337…BC338 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/12/2007