BC807 / BC808 PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the NPN transistors BC817 SOT-23 Plastic Package and BC818 are recommended. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol BC807 BC808 BC807 BC808 Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Value Unit 50 30 45 25 -VCBO -VCEO V V -VEBO 5 V Collector Current -IC 500 mA Power Dissipation Ptot 200 mW Thermal Resistance Junction to Ambient Air RθJA 500 K/W Junction Temperature TJ 150 O Storage Temperature Range TS - 55 to + 150 O C C Electrical Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 1 V, -IC = 100 mA Current Gain Group at -VCE = 1 V, -IC = 500 mA Collector Base Cutoff Current at -VCB = 20 V Emitter-Base Cutoff Current at -VEB = 5 V Collector Saturation Voltage at -IC = 500 mA, -IB = 50 mA Base-Emitter Voltage at -IC = 500 mA, -VCE = 1 V Gain -Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 50 MHz Collector-Base Capacitance at -VCB = 10 V, f = 1 MHz -16 -25 -40 Symbol Min. Typ. Max. Unit hFE hFE hFE hFE 100 160 250 40 - 250 400 600 - - -ICBO - - 100 nA -IEBO - - 100 nA -VCEsat - - 0.7 V -VBE(on) - - 1.2 V fT 80 - - MHz CCBO - 9 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 19/12/2006 BC807 / BC808 Power Dissipation vs Ambient Temperature Power Dissipation: Ptot (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 Ambient Temperature: Ta ( C) O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 19/12/2006