BC817 / BC818 NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier application, These transistors are subdivided into three groups –16, -25, -40 according to their current gain. As complementary types, the PNP transistors BC807 and BC808 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol BC817 BC818 BC817 BC818 Collector Base Voltage Collector Emitter Voltage Value 50 30 45 25 VCBO VCEO Emitter Base Voltage Unit V V VEBO 5 V Collector Current IC 500 mA Power Dissipation Ptot 200 mW Thermal Resistance , Junction to Ambient RθJA 500 K/W Junction Temperature TJ 150 O Storage Temperature Range Ts - 55 to + 150 O C C Electrical Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 100 mA Current Gain Group at VCE = 1 V, IC = 500 mA Collector Base Cutoff Current at VCB = 20 V Emitter-Base Cutoff Current at VEB = 5 V Collector Saturation Voltage at IC = 500 mA, IB = 50 mA Base-Emitter Voltage at IC = 500 mA, VCE = 1 V Gain -Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 50 MHz Collector-Base Capacitance at VCB = 10 V, f = 1 MHz -16 -25 -40 Symbol Min. Typ. Max. Unit hFE hFE hFE hFE 100 160 250 40 - 250 400 600 - - ICBO - - 100 nA IEBO - - 100 nA VCEsat - - 0.7 V VBE(on) - - 1.2 V fT 100 - - MHz CCBO - 5 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 19/12/2005 BC817 / BC818 Power Dissipation vs Ambient Temperature Power Dissipation: Ptot (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 Ambient Temperature: Ta ( C) O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 19/12/2005