BCW30 PNP Silicon Epitaxial Planar Transistor general purpose switching and amplification SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 32 V Collector Emitter Voltage -VCEO 32 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 100 mA Peak Collector Current -ICM 200 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 2 mA Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA Base Emitter Voltage at -VCE = 5 V, -IC = 2 mA Transition Frequency at -VCE = 5 V, IE = 10 mA, f = 100 MHz Collector Base Capacitance at -VCB = 10 V, f = 1 MHz Symbol Min. Typ. Max. Unit hFE 215 - 500 - -ICBO - - 100 nA -IEBO - - 100 nA -V(BR)CBO 32 - - V -V(BR)CEO 32 - - V -V(BR)EBO 5 - - V -VCE(sat) - - 0.3 V -VBE 0.6 - 0.75 V fT 100 - - MHz CCBO - 4.5 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 24/08/2007