MMBD6050 SILICON EPITAXIAL PLANAR SWITCHING DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 3 1 2 Applications Marking Code: 5D SOT-23 Plastic Package • Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFSM 500 mA Power Dissipation Pd 300 mW Junction Temperature Tj 150 O Storage Temperature Range Ts - 55 to + 150 O Peak Forward Surge Current C C Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA at IF = 100 mA Reverse Current at VR = 50 V Reverse Breakdown Voltage at IR = 100 µA Diode Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, IR(REC) = 1 mA Symbol Min. Max. Unit VF 0.55 0.85 0.7 1.1 V IR - 100 nA V(BR)R 70 - V CT - 2.5 pF trr - 4 ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/10/2008 MMBD6050 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/10/2008