MMBTA13 NPN Silicon Epitaxial Planar Darlington Transistor SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector Emitter Voltage VCES 30 V Collector Base Voltage VCBO 30 V Emitter Base Voltage VEBO 10 V IC 500 mA Total Device Dissipation Derate above 25 OC Ptot 200 2.8 mW mW/ OC Thermal Resistance, Junction to Ambient RθJA 357 Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O Collector Current C/W O C C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBTA13 Characteristics at Tamb=25 OC Symbol Min. Max. Unit at IC=10mA, VCE=5V hFE 5000 - - at IC=100mA, VCE=5V hFE 10,000 - - ICBO - 0.1 μA IEBO - 0.1 μA V(BR)CES 30 - V VCE(sat) - 1.5 V VBE(on) - 2 V fT 125 - MHz DC Current Gain Collector Cutoff Current at VCB=30V Emitter Cutoff Current at VEB=10V Collector Emitter Breakdown Voltage at IC=100μA Collector Saturation Voltage at IC=100mA, IB=0.1mA Base On Voltage at IC=100mA, VCE=5V Current Gain – Bandwidth Product at IC=10mA, VCE=10V, f=100MHz SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005