MMBTSA1365 PNP Silicon Epitaxial Planar Transistor for high current drive application The transistor is subdivided into three groups E, F and G according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 25 V Collector Emitter Voltage -VCEO 20 V Emitter Base Voltage -VEBO 4 V Collector Current -IC 700 mA Peak Collector Current -ICM 1 A Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 4 V, -IC = 100 mA Collector Cutoff Current at -VCB = 25 V Emitter Cutoff Current at -VEB = 2 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 100 µA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Saturation Voltage at -IC = 500 mA, -IB = 25 mA Transition Frequency at -VCE = 6 V, IE = 10 mA E F G Symbol Min. Typ. Max. Unit hFE hFE hFE 150 250 400 - 300 500 800 - -ICBO - - 1 µA -IEBO - - 1 µA -V(BR)CBO 25 - - V -V(BR)CEO 20 - - V -V(BR)EBO 4 - - V -VCE(sat) - - 0.5 V fT - 180 - MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 06/12/2006 MMBTSA1365 Power Dissipation vs Ambient Temperature Power Dissipation: Ptot (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 Ambient Temperature: Ta ( C) O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 06/12/2006