MMBTSD123 NPN Silicon Epitaxial Planar Transistor Low saturation medium current application Suitable for low voltage large current drivers SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 20 V Collector Emitter Voltage VCEO 15 V Emitter Base Voltage VEBO 6.5 V Collector Current IC 1 A Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 100 mA Collector Cutoff Current at VCB = 20 V Emitter Cutoff Current at VEB = 6 V Collector Base Breakdown Voltage at IC = 50 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 50 µA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Transition Frequency at VCE = 5 V, IC = 50 mA Output Capacitance at VCB = 10 V, f = 1 MHz C C Symbol Min. Typ. Max. Unit hFE 150 - - - ICBO - - 100 nA IEBO - - 100 nA V(BR)CBO 20 - - V V(BR)CEO 15 - - V V(BR)EBO 6.5 - - V VCE(sat) - - 0.3 V fT - 260 - MHz COB - 5 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/09/2007 MMBTSD123 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/09/2007