RB501V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features • Small surface mounting type • High reliability PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Applications • Low current rectification S7 Top View Marking Code: "S7" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 45 V Reverse Voltage VR 40 V Mean Rectifying Current IO 0.1 A IFSM 1 Junction Temperature Tj 125 O Storage Temperature Range Ts - 40 to + 125 O Peak Forward Surge Current (60 Hz for 1 Cyc.) A C C Characteristics at Ta = 25 OC Parameter Symbol Typ. Max. Unit VF VF - 0.55 0.34 V V Reverse Current at VR = 10 V IR - 30 µA Capacitance Between Terminals at VR = 10 V, f = 1 MHz CT 6 - pF Forward Voltage at IF = 100 mA at IF = 10 mA Note: ESD sensitive product handling required. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 RB501V-40 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 RB501V-40 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE A D E bp UNIT A bp C D E HE mm 1.10 0.80 0.40 0.25 0.15 0.00 1.80 1.60 1.35 1.15 2.80 2.30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006