SEMTECH_ELEC RB521S-30

RB521S-30
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for low current rectification and high speed
switching applications
PINNING
Features
• Extremely small surface mounting type
DESCRIPTION
PIN
1
Cathode
2
Anode
2
1
C
Top View
Marking Code: "C"
Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Mean Rectifying Current
IO
200
mA
IFSM
1
A
Junction Temperature
Tj
125
O
Storage Temperature Range
Ts
- 40 to + 125
O
Symbol
Max.
Unit
Forward Voltage
at IF = 200 mA
VF
0.5
V
Reverse Current
at VR = 10 V
IR
30
µA
Peak Forward Surge Current (60Hz for Cyc.)
C
C
Characteristics at Ta = 25 OC
Parameter
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
RB521S-30
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
RB521S-30
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-523
ALL ROUND
C
A
∠
HE
D
E
bp
A
UNIT
A
bp
C
D
E
HE
V
mm
0.70
0.60
0.4
0.3
0.135
0.127
1.25
1.15
0.85
0.75
1.7
1.5
0.1
∠
5
O
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006