SD103A...SD103C SILICON SCHOTTKY BARRIER DIODES for general purpose applications The SD103A, B, C is a metal on silicon Schottky barrier Max. 0.5 device which is protected by a PN junction guard ring. Min. 27.5 Max. 1.9 The low forward voltage drop and fast switching make Black Cathode Band Black Part No. Black "ST" Brand it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic XXX Max. 3.9 ST level applications. Other uses are for click suppression, efficient full wave bridges in telephone subsets, and as Min. 27.5 blocking diodes in rechargeable low voltage battery system. Glass Case DO-35 Dimensions in mm This diode is also available in MiniMELF case with type designation LL103A, B, C. Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage SD103A SD103B SD103C Symbol Value Unit VRRM 40 30 20 V 1) Power Dissipation Ptot 400 Single Cycle Surge 60 Hz Sine Wave IFSM 15 Junction Temperature Tj 125 O Storage Temperature Range TS - 55 to + 175 O 1) mW A C C Valid provided the leads direct at the case are kept at ambient temperature. Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 20 mA at IF = 200 mA Reverse Leakage Current at VR = 30 V at VR = 20 V at VR = 10 V Junction Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = IR = 5 mA to 200 mA , recover to 0.1 IR SD103A SD103B SD103C Symbol Typ. Max. Unit VF VF - 0.37 0.6 V V IR - 5 µA Ctot 50 - pF trr 10 - ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/06/2007 SD103A...SD103C Typical high current forward conduction curve Typical variation of fwd. current vs.fwd.voltage for primary conduction through the Schottky barrier tp=300 s, duty cycle=2% A mA SD103 103 10 2 IF SD103 5 IF 4 10 3 1 2 10 -1 1 10 -2 0 0 0.5 0 1V 0.5 1 1.5V VF VF Typical variation of reverse current at various temperatures Typical non repetitive forward surge current versus pulse width Rectangular pulse A A SD103 50 IF SD103 103 40 IR Tamb=125o C 100 oC 10 2 75 oC 30 10 50 oC 20 25 oC 1 10 10 -1 0 10 -3 10 -2 10 -1 1 10 10 2 103 ms 0 10 20 30 40 Typical capacitance versus reverse voltage Blocking voltage deration versus temperature at various average forward currents pF V SD103 100 SD103 50 50V VR tp 7 Ctot VR 40 5 4 3 100 mA 2 30 200 mA 10 I F =400 mA 20 7 5 4 3 10 2 0 0 o 200 C 100 1 0 10 20 Tamb 30 40 50V VR SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/06/2007