ST 13005 NPN Silicon Power Transistors for high-voltage, high-speed power switching applications. TO-220 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V IC 4 A Power Dissipation (Ta = 25 C) Ptot 2 W Power Dissipation (Tc = 25 OC) Ptot 75 W Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O Collector Current O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 1 A at VCE = 5 V, IC = 2 A Collector Base Cutoff Current at VCB = 700 V Emitter Base Cutoff Current at VEB = 9 V Collector Emitter Breakdown Voltage at IC = 10 mA Collector Emitter Saturation Voltage at IC = 1 A, IB = 0.2 A at IC = 2 A, IB = 0.5 A at IC = 4 A, IB = 1 A Base Emitter Saturation Voltage at IC = 1 A, IB = 0.2 A at IC = 2 A, IB = 0.5 A Gain Bandwidth Product at VCE = 10 V, IC = 500 mA, f = 1 MHz Collector Base Capacitance at VCB = 10 V, f = 0.1 MHz C C Symbol Min. Typ. Max. Unit hFE hFE 10 8 - 60 40 - ICBO - - 1 mA IEBO - - 1 mA V(BR)CEO 400 - - V VCE(sat) VCE(sat) VCE(sat) - - 0.5 0.6 1 V V V VBE(sat) VBE(sat) - - 1.2 1.6 V V fT 4 - - MHz Ccb - 65 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 28/08/2008 ST 13005 TO-220 PACKAGE OUTLINE SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 28/08/2008