ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 5 V Collector Current IC 700 mA Power Dissipation Ptot 600 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SC2001 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit Current Gain Group O hFE 90 - 180 - Y hFE 135 - 270 - G hFE 200 - 400 - hFE 50 - - - V(BR)CBO 30 - - V VBE 0.6 - 0.7 V IEBO - - 0.1 μA ICBO - - 0.1 μA VCE(sat) - 0.2 0.6 V VBE(sat) - 0.95 1.2 V fT 50 170 - MHz COB - 13 25 pF DC Current Gain at VCE=1V, IC=100mA at VCE=1V, IC=700mA Collector Base Breakdown Voltage at IC=10μA Base Emitter Voltage at IC=10mA, VCE=6V Emitter Cutoff Current at VEB=5V Collector Cutoff Current at VCB=30V Collector Saturation Voltage at IC=700mA, IB=70mA Base Saturation Voltage at IC=700mA, IB=70mA Gain Bandwidth Product at VCE=6V, IC=10mA Output Capacitance at VCB=6V, f=1MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002