ST 2SD734 NPN Silicon Epitaxial Planar Transistor for 1W Output, Electronic Governor, DC-DC Converter Applications. The transistor is subdivided into four groups D, E, F and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Collector Base Voltage VCBO 25 V Collector Emitter Voltage VCEO 20 V Emitter Base Voltage VEBO 5 V Collector Current IC 700 mA Collector Current (Pulse) ICP 1500 mA Power Dissipation Ptot 600 mW Tj 150 O -55 to +150 O Junction Temperature Storage Temperature Range TS C C SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 2SD734 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group D hFE 60 - 120 - E hFE 100 - 200 - F hFE 160 - 320 - G hFE 280 - 560 - hFE 50 - - - ICBO - - 1 µA IEBO - - 1 µA fT - 250 - MHz Cob - 8 - pF DC Current Gain at VCE=2V, IC=50mA at VCE=2V, IC=500mA Collector Cutoff Current at VCB=20V Emitter Cutoff Current at VEB=4V Gain Bandwidth Product at VCE=10V, IC=50mA Output Capacitance at VCB=10V,f=1MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002