ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features ․Low collector-emitter saturation voltage ․Satisfactory operation performances at high TO-92 Plastic Package efficiency with the low voltage power supply Weight approx. 0.19g Absolute Maximum Ratings (Ta=25oC) Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 20 V Emitter Base Voltage VEBO 7 V Peak Collector Current ICP 8 A Collector Current IC 5 A Power Dissipation Ptot 750 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/08/2003 ST 2SD965 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit P hFE 120 - 250 - Q hFE 230 - 380 - R hFE 340 - 600 - hFE 150 - - - ICBO - - 0.1 μA ICEO - - 1.0 μA IEBO - - 0.1 μA Cob - 26 50 pF VCEO 20 - - V VEBO 7 - - V VCE(sat) - 0.28 1 V fT - 150 - MHz DC Current Gain at VCE=2V, IC=0.5A at VCE=2V, IC=1A Collector Cutoff Current at VCB=10V Collector Cutoff Current at VCE=10V Emitter Cutoff Current at VEB=7V Collector Output Capacitance at VCB=20V, f=1MHz (Common base, input open circuited) Collector to Emitter Voltage at IC=1mA Emitter to Base Voltage at IE=10μA Collector to Emitter Saturation Voltage at IC=3A, IB=0.1A Current Gain Bandwidth Product at VCB=6V, IE= -50mA, f=200MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/08/2003 ST 2SD965 P C - Ta I C - VCE I C - VBE 6 2.4 1000 VCE=2V Ta=25 C I B =7mA 2.0 800 Ta= 75 C 5 25 C 6mA 4 1.6 5mA 1.2 4mA I C, A I C, A 600 P C, mW -25 C 3 3mA 400 2 0.8 2mA 200 0.4 1 1mA 0 0 0 40 80 120 0 0 160 0.4 0.8 1.2 1.6 2.0 2.4 0.4 0 0.8 VCE, V Ta ( C) VCE(sat) - I C VBE(sat) - I C 2.0 h FE - I C 600 IC/IB=30 IC/IB=30 1.6 VBE , V 100 10 1.2 VCE=2V Ta=25 C 500 10 1 Ta= 75 C 25 C -25 C 25 C 1 Ta= -25 C h FE Ta= 75 C 0.1 VBE(sat) , V VCE(sat), V 400 25 C 300 75 C -25 C 200 0.1 0.01 100 0.001 0.01 0.1 10 1 0.01 0.01 0.1 COLLECTOR CURRENT, A fT, MHz 300 200 100 SAFE OPERATION AREA I E =0 f=1MHz Ta=25 C Single pulse Ta=25 C 80 10 I E, A -10 I CP IC 60 t=10ms t=1s 1 40 0.1 20 0.01 0 -1 10 100 IC, A COLLECTOR OUTPUT CAPACITANCE, pF (COMMON BASE, INPUT OPEN CIRCUITED) VCB=6V Ta=25 C 1 COLLECTOR CURRENT, A Cob - VCB 100 -0.1 0.1 COLLECTOR CURRENT, A fT - I E 400 0 -0.01 0 0.01 10 1 1 10 VCB, V 100 0.1 10 1 VCE, V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/08/2003 100