ST BT134T TRIAC APPLICATIONS • For use in high bidirectional transient and blocking voltage applications • For high thermal cycling performance • Typical application include motor control, industrial and domestic lighting, heating and static switching T1 T2 G TO-126 Plastic Package T2 G T1 Absolute Maximum Ratings Parameter Symbol Repetitive Peak Off State Voltage 1) Unit VDRM 600 IT(RMS) 4 A ITSM 25 27 A I2t 3.1 A2s dIT/dt A/µs IGM 50 50 50 10 2 Peak Gate Voltage VGM 5 V Peak Gate Power PGM 5 W PG(AV) 0.5 Operating Junction Temperature TJ 125 O Storage Temperature Range Tstg -40 to +150 O RMS on State Current Full Sine Wave, Tmb ≤ 107 OC Non-Repetitive Peak on State Current Full Sine Wave, TJ = 25 OC Prior to Surge I2t for Fusing t = 20 ms t = 16.7 ms t = 10 ms Repetitive Rate of Rise of on State Current after Triggering ITM = 6 A, IG = 0.2 A, dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ Peak Gate Current Average Gate Power (Over any 20 ms period) 1) Value V A W C C The rate of rise of current should not excees 3A/µs SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 08/04/2006 ST BT134T Characteristics at TJ = 25 OC Parameter Symbol Min. Typ. Max. - - 35 35 35 70 - - 20 30 20 30 Unit Gate Trigger Current at VD = 12 V, IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ IGT mA Latching Current at VD = 12 V, IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ IL mA Holding Current at VD = 12 V, IGT = 0.1 A IH - - 15 mA On State Voltage at IT = 5 A VT - - 1.7 V VGT 0.25 - 1.5 - V ID - - 0.5 mA dVD/dt 100 250 - V/µs dVcom/dt - 50 - V/µs tgt - 2 - µs Gate Trigger Voltage at VD = 12 V, IT = 0.1 A at VD = 400 V, IT = 0.1 A, TJ = 125 OC Off State Leakage Current at VD = max, VDRM = max, TJ = 125 OC Critical Rate of Rise of Off State Voltage at VDM = 67% VDRM max, TJ = 125 OC, exponential waveform, gate open circuit Critical Rate of Change of Commutating Voltage at VDM = 400 V, TJ = 95 OC, IT(RMS) = 4 A, dIcom/dt = 1.8 A/ms, gate open circuit Gate Controlled Turn On Time at ITM = 6 A, VD = VDRM max, IG = 0.1 A, dIG/dt = 5 A/µs, Thermal Resistance Parameter Symbol Value Unit Junction to Mounting Base Full Cycle Half Cycle Rth(j-mb) 3 3.7 K/W Junction to Ambient (typical) In Free Air Rth(j-a) 100 (Typ.) K/W SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 08/04/2006