SE7265L 2.3-2.7 GHz WiMAX Power Amplifier Preliminary Applications Product Description IEEE802.16e WiMAXTM Mobile WiMAX datacards, modules and terminals Features 2.3-2.7 GHz operation 25 dBm Linear output power, at 3.3V 37 dB gain Integrated Step Attenuator and output power detector All RF ports matched for 50 Ω operation Supply voltage: 2.9 V – 4.2 V Lead free, Halogen free, ROHS compliant package (4 mm x 4 mm x 0.9 mm), MSL 1 The SE7265L WiMAX Power Amplifier is a high performance device offering high output power with high linearity and exceptional efficiency. Designed for portable or mobile applications in the 2.3-2.7 GHz band, it supports the IEEE 802.16e wireless standards. . Ordering Information Part No. Package Remark SE7265L SE7265L-R SE7265L-EK1 16 pin QFN 16 pin QFN N/A Samples Tape and Reel Evaluation kit Functional Block Diagram VDD1 VDD2 VDD3 TEMP Temp Sensor RF in RF out Bias and Control VREF VATTN Power Det VDET Figure 1: Functional Block Diagram DST-00218 Rev 1.5 July-10-2009 1 of 10 SE7265L 2.3-2.7 GHz WiMAX Power Amplifier Preliminary http://www.sige.com Email: [email protected] Customer Service Locations: North America: 1050 Morrison Drive, Suite 100 Ottawa ON K2H 8K7 Canada Hong Kong Phone: +852 3428 7222 Fax: +852 3579 5450 Phone: +1 613 820 9244 Fax: +1 613 820 4933 San Diego Phone: +1 858 668 3541 (ext. 226) Fax: +1 858 668 3546 United Kingdom Phone: +44 1279 464217 Fax: +44 1279 464201 Product Preview The datasheet contains information from the product concept specification. SiGe Semiconductor, Inc. reserves the right to change information at any time without notification. Preliminary Information The datasheet contains information from the design target specification. SiGe Semiconductor, Inc. reserves the right to change information at any time without notification. Production testing may not include testing of all parameters. Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor, Inc. assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any patent or other intellectual property rights of SiGe Semiconductor, Inc. or third parties. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe Semiconductor, Inc. products are NOT authorized for use in implantation or life support applications or systems without express written approval from SiGe Semiconductor, Inc. Copyright 2009 SiGe Semiconductor, Inc. All Rights Reserved DST-00218 Rev 1.5 July-10-2009 10 of 10