3VD212600YL 3VD212600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD212600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon 3 epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltageblocking capability. 1 ¾ Avalanche Energy Specified ¾ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode PAD1:GATE ¾ The chips may packaged in TO-251 type and the typical equivalent product is 1N60A. PAD3:SOURCE CHIP TOPOGRAPHY ¾ The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. ¾ Die size: 2.12mm*2.02mm. ¾ Chip Thickness: 300±20μm. ¾ Top metal: Al, Backside Metal: Ag. ABSOLUTE MAXIMUM RATINGS (Tamb=25°C) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Drain Current ID 1.0 A Power Dissipation(TO-251 Package) PD 28 W TJ -55～+150 °C Tstg -55～+150 °C Operation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameter Drain -Source Breakdown Voltage Symbol BVDSS Test conditions Min Typ Max Unit VGS=0V, ID=250µA 600 - - V Gate Threshold Voltage VTH VGS= VDS, ID=250µA 2.0 - 4.0 V Drain-Source Leakage Current IDSS VDS=600V, VGS=0V - - 1.0 µA VGS=10V, ID=0.5A - 8.1 8.5 Ω IGSS VGS=±30V, VDS=0V - - ±100 nA VFSD IS=1.0A, VGS=0V - - 1.4 V Static Drain- Source On State Resistance Gate-Source Leakage Current Source-Drain Diode Forward On Voltage RDS(on) HANGZHOU MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2008.08.23 Page 1 of 1