3VD250600YL 3VD250600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD250600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. 11 ¾ Advanced termination scheme to provide enhanced 3 voltage-blocking capability. ¾ Avalanche Energy Specified ¾ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode PAD1-Gate ¾ The chips may packaged in TO-251 type and the typical equivalent product is 2N60. PAD3-Source CHIP TOPOGRAPHY ¾ The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. ¾ Die size: 2.59mm*2.42mm. ¾ Chip Thickness: 300±20μm. ¾ Top metal : Al, Backside Metal : Ag. ABSOLUTE MAXIMUM RATINGS (Tamb=25°C) Parameter Symbo l Ratings Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Drain Current ID 2.0 A Power Dissipation (TO-251 Package) PD 44 W TJ -55～+150 °C Tstg -55～+150 °C Operation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameter Drain -Source Breakdown Voltage Symbo l BVDSS Test conditions Min. Typ. Max. Unit VGS=0V, ID=250µA 600 - - V Gate Threshold Voltage VTH VGS= VDS, ID=250µA 2.0 - 4.0 V Drain-Source Leakage Current IDSS VDS=600V, VGS=0V - - 1.0 µA VGS=10V, ID=1.0A - 4.1 4.6 Ω IGSS VGS=±30V, VDS=0V - - ±100 nA VFSD IS=2.0A, VGS=0V - - 1.4 V Static Drain- Source On State Resistance Gate-Source Leakage Current Source-Drain Diode Forward on Voltage RDS(on) HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2008.07.28 Page 1 of 2 3VD250600YL HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2008.07.28 Page 2 of 2