SILIKRON SSF2301A

SSF2301A
D
DESCRIPTION
The SSF2301A uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a load switch or in PWM applications.
G
S
GENERAL FEATURES
Schematic diagram
● VDS = -20V,ID = -4A
RDS(ON) < 100mΩ @ VGS=-2.5V
RDS(ON) < 65mΩ @ VGS=-4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOT23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2301A
SSF2301A
SOT23
Tape width
Quantity
8 mm
3000 units
Ø180mm
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±12
V
ID
-4
A
IDM
-20
A
PD
1.6
W
TJ,TSTG
-55 To 150
℃
RθJA
156
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS
VDS=-20V,VGS=0V
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
±100
nA
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SSF2301A
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
Drain-Source On-State Resistance
RDS(ON)
Forward Transconductance
VDS=VGS,ID=-250μA
gFS
-0.5
-1
V
VGS=-4.5V, ID=-4A
46
65
VGS=-2.5V, ID=-3A
80
100
VDS=-5V,ID=-4A
7
S
640
PF
180
PF
mΩ
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=-10V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
100
PF
Turn-on Delay Time
td(on)
27
nS
Turn-on Rise Time
tr
60
nS
30
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
VDD=-10V,ID=-1A
VGS=-4.5V,RGEN=6Ω
td(off)
Turn-Off Fall Time
tf
10
nS
Total Gate Charge
Qg
9.6
nC
Gate-Source Charge
Qgs
1.5
nC
Gate-Drain Charge
Qgd
2.4
nC
VDS=-10V,ID=-4A,VGS=-4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1A
-1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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SSF2301A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Vgs
Rgen
td(on)
Rl
Vin
D
ton
tr
toff
tf
td(off)
Vout
90%
VOUT
G
90%
INVERTED
10%
10%
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
R(t),Normalized Effective
Transient Thermal Impedance
Figure1:Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
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SSF2301A
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions in Millimeters
MIN.
MAX.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950TYP
1.800
2.000
0.550REF
0.300
0.500
0°
8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
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SSF2301A
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron
representative nearest you before using any Silikron products described or contained herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test devices
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Any and all information described or contained herein are subject to change without notice due to
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This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
©Silikron Semiconductor CO.,LTD.
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