SILIKRON SSF9926

SSF9926
DESCRIPTION
The SSF9926 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
Schematic diagram
GENERAL FEATURES
● VDS = 20V,ID =6A
RDS(ON) < 28mΩ @ VGS=2.5V
RDS(ON) < 44mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
SSF9926
SSF9926
SOP-8
Ø330mm
12mm
2500 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±10
V
ID
6
A
IDM
24
A
PD
2
W
TJ,TSTG
-55 To 150
℃
RθJA
62.5
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
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SSF9926
Gate-Body Leakage Current
IGSS
VGS=±10V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
0.75
1
V
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=6A
22.5
28
mΩ
VGS=2.5V, ID=5.2A
32
44
mΩ
VDS=5V,ID=4.5A
18
S
550
PF
140
PF
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
0.6
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=8V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
120
PF
Turn-on Delay Time
td(on)
9.6
nS
Turn-on Rise Time
tr
6.5
nS
28
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
td(off)
VDS=10V,VGS=4.5V,RGEN=6Ω
ID=1A
Turn-Off Fall Time
tf
6
nS
Total Gate Charge
Qg
6
nC
Gate-Source Charge
Qgs
1.5
nC
Gate-Drain Charge
Qgd
1.5
nC
VDS=10V,ID=3A,VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1.7A
1
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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SSF9926
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Vgs
Rgen
td(on)
Rl
Vin
D
ton
tr
td(off)
Vout
90%
VOUT
G
toff
tf
90%
INVERTED
10%
10%
S
90%
VIN
50%
50%
10%
PULSE WIDTH
Figure 1: Switching Test Circuit
ZthJA Normalized Transient
Thermal Resistance
Figure 2:Switching Waveforms
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
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SSF9926
SOP-8 PACKAGE INFORMATION
NOTES:
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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SSF9926
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
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This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
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