E L E C T R O N I C CH521S-30PT Schottky Rectifier - 0.2Amp 30Volt □ Features -For surface mounted applications -Low profile package -Built-in strain relief -Metal silicon junction, majority carrier conduction -Low power loss, high efficiency -High current capability, low forward voltage drop -For use in low voltage high frequency inverters, free wheeling and polarity protection application -High temperature soldering guaranteed -High reliability -High surge current capability -Epitaxial construction -Lead free device -ESD sensitive product handling required SOD-523 .013(0.35) .009(0.25) .033(0.85) .029(0.75) .051(1.30) .043(1.10) .006(0.17) .002(0.07) .030(0.77) .019(0.50) .015(0.40) □ Mechanical data -Case：Molded plastic -Epoxy：UL 94V-0 rate flame retardant -Terminals：Solder plated, solderable per MIL-STD-750,method 2026 -Polarity：Color band denotes cathode end .066(1.70) .059(1.50) □ Maximum ratings and Electrical characteristics TYPE SYMBOL CH521S-30PT UNIT Maximum Recurrent Peak Reverse Voltage VRRM 30 V Maximum RMS Voltage VRMS 21 V Maximum DC Blocking Voltage VDC 30 V Maximum Average Forward Rectified Current IO 0.2 A Peak Forward urge Current, 8.3ms single half sine-wave IFSM 1.0 A Maximum Instantaneous Forward Voltage at IF = 200mA VF 0.5 V Maximum Average Reverse Current at VR = 10V IR 30 μA Typical Junction Capacitance between Terminal (Note 1) CJ 14 pF Operating Temperature Range TJ 125 ºC Storage Temperature Range TSTG -40 - 125 ºC Note: Measured at 1.0 MHz and applied reverse voltage of 10.0 volts http:// www.sirectsemi.com August 2007 / Rev.5 1 CH521S-30PT 10m 1 Ta = 125℃ 1m REVERSE CURRENT , (A) 12 5℃ 10m -25 ℃ 25 100u ℃ 75 ℃ = 1m Ta FORWARD CURRENT , (A) 100m 10u 75℃ 100u 25℃ 10u 1u -25℃ 100n 10n 1u 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.7 10 30 Figure 2. Reverse Characteristics Figure 1. Forward Characteristics 100 0.5 AVERAGE FORWARD CURRENT , (A) JUNCTION CAPACITANCE , (pF) 20 REVERSE VOLTAGE , (V) FORWARD VOLTAGE , (V) 10 f = 1MHz 1 0 2 4 6 8 10 12 0.4 0.3 0.2 0.1 0 0 REVERSE VOLTAGE , (V) 25 50 75 100 125 150 AMBIENT TEMPERATURE ,℃ Figure 3. Typical Junction Capacitance Figure 4. Forward Current Derating Curve Sirectifier Global Corp., Delaware, U.S.A. U.S.A.: [email protected] France: [email protected] Taiwan: [email protected] Hong Kong: [email protected] China: [email protected] …Thailand: [email protected] Philippines: [email protected] Belize: [email protected] http:// www.sirectsemi.com 2