3TA250GKxxNB Three Phase Thyristor Module (Half Bridge) K3 K1 K2 K2 G2 K1 K3 G1 3 G3 K3 K3 Type 3TA250GK03NB 3TA250GK04NB VRSM V 400 500 Symbol IT(AV) IT(RMS) ITSM 2 Dimensions in mm (1mm = 0.0394") K1 1 K2 G2 K1 G1 A G3 K2 A VRRM V 300 400 Test Conditions Single phase, half wave, 180oC conduction,TC=114oC 1/2cycle, 50Hz/60Hz, peak value, non-repetitive Maximum Ratings Unit 250 392 A 6750/7420 A 2 It 620000 A2s PGM PG(AV) 10 1 W IFGM 3 A VFGM VRGM 10 5 V 60 A/us di/dt IG=150mA, Tj=25oC, VD=1/2VDRM, dIG/dt=1A/us -30...+150 150 -30...+125 TVJ TVJM Tstg Ms Mt Weight to heatsink M6 to terminals M6 o C 3 ~ 5 2.5 ~ 5 Nm 210 g 3TA250GKxxNB Three Phase Thyristor Module (Half Bridge) Symbol Test Conditions IDRM IRRM at VDRM, single phase, half wave, Tj=150oC VTM o On-State Current 750A, Tj=25 C Inst. measurement IGT Tj=150oC, VD=1/2VDRM tgt IT=100A, IG=200mA, Tj=25oC, VD=1/2VDRM, dIG/dt=1A/us IH RthJC typ. max. Unit 80 80 mA 1.25 V 200 mA Tj=25oC, IT=1A, VD=6V VGD dv/dt min. V 0.25 o Tj=150 C, VD=2/3VDRM, Exponential wave Tj=25oC 10 V/us 150 * International standard package * Copper base plate * Glass passivated chips * RoHS compliance mA 150 Junction to case (1/3 Module) FEATURES us 0.09 APPLICATIONS ADVANTAGES o C/W * Welding Machine Power Supply * Space and weight savings * DC Power Supply * Simple mounting with two screws * Improved temperature and power cycling * Reduced protection circuits 3TA250GKxxNB ０． １ Transient Thermal Impedance Junction to Case ０． １ Per one element 2 １４ 360 θ： Conduction Angle １３ ０． １ １２ ０． ０ １１ ０． ０ １０ ０． ０ Per one element ０． ０ ０． ０ １０ー １０ １０ ー ー t（sec） Time １０ ９ θ＝30゜ θ＝90゜ θ＝60゜ １０ １０ θ＝180゜ D.C. θ＝120゜ ０ ０ ０ Average On-State Current（A） On-State Voltage max （Non-Repetitive） 8000 Surge On-State Current （A） On-State Current （A） Case Temperature（Single phase half wave） １５ Allowable Case Temperature（℃） Transient Thermal Impedance θj-c （℃/W） Three Phase Thyristor Module (Half Bridge) １０ １０ Per one element 7000 6000 ６０Hz 5000 4000 3000 １０ １． １０ On-State Voltage （V） （Single phase half wave） Gate Characteristics ３０ １０ θ＝120゜ θ＝90゜ ２０ 2 θ＝60゜ θ＝30゜ 360 １０ : Conduction Angle Gate Voltage（V） Power Dissipation （W） D.C. θ＝180゜ Av Po er we ag e r（ te 10 W） Ga Po we r（ 1W ） １０ Per one element Maximum Gate Voltage that will not terigger any unit ０ １０ ０ Average On-State Current（A） ３０ １０ １０ Gate Current （mA） １０ Peak Gate Current（３A） ４０ １０ Time（cycles）