E L E C T R O N I C PS90N80 N-Channel Enhancement Mode Field Effect Transistor - 90Amp 80Volt □ Application -Servomotor control -Power MOSFET gate drivers -Other switching applications □ Circuit □ Feature -Small surface mounting type D -High density cell design for low RDS(ON) -Suitable for high packing density -Rugged and reliable -High saturation current capability G -Voltage controlled small signal switch S □ Construction -N-Channel Enhancement □ Absolute Maximum Ratings PARAMETER SYMBOL PS90N80 UNIT Drain-Source Voltage VDS >80 V Gate-Source Voltage VGS ± 20 V Drain Current-Continuos @ TA = 125ºC (Note 1) ID 90 -Pulsed (Note 2) IDM 300 Drain-Source Diode Forward Current IS 60 A Maximum Power Dissipation PD 220 W Operting Junction and Storage Temperature Range TJ , TSTG -55 to +175 ºC Thermal Resistance, Junction-to-Ambient RθJA 50 ºC/W Note: 1.Surface Mounted on FR-4 Board, t≦2% 2.Pulse Test : 380μs pulse width, 2% duty cycle http:// www.sirectsemi.com A June 2009 / Rev.6.4 PS90N80 □ Electrical Characteristics PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNIT Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250μA 75 - - V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V - - 20 μA Gate-Body Leakage IGSS VGS = ±16V, VDS = 0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250μA 2 - 4 V Ststic Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 40A - 7.5 11 mΩ Forward Transconductance gFS VDS = 25V, ID = 30A - 50 - S - 90 140 - 20 35 OFF CHARACTERISTICS ON CHARACTERISTICS SWITCHING CHARACTERSTICS Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 30 45 Turn-On Delay Time TD(on) - 12 - Rise Time tr - 79 - Turn-Off Delay Times TD(off) - 80 - Fall Time tf - 52 - Input Capacitance CISS - 3300 - Output Capacitance COSS - 530 - Reverse Transfer Capacitance CRSS - 80 - - 1.5 - VDS = 60V, ID = 48A VGS = 10V, RGEN = 4.7Ω VDD = 38V, ID = 48A VGEN = 10V, RL = 10Ω RGEN = 4.7Ω nC nS nS DYNAMIC CHARACTERISTICS VDS = 25V, VGS = 0V f = 1.0MHz pF DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage VSD VGS = 0V, IS = 60A http:// www.sirectsemi.com V PS90N80 250 250 VGE = 10V VGS = 10V 9V 200 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 200 8V 7V 150 6V 100 5V 150 100 50 50 4V 0 0 0 10 20 30 0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 2 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 5000 2.8 ID = 30A VGS = 10V RDS(ON), ON-RESISTANCE (mΩ) f = 1MHz VGS = 0V 4000 C, CAPACTIANCE (pF) 4 3000 CISS 2000 1000 COSS 2.2 1.6 1.0 0.4 CROSS 0 0 10 20 30 40 50 -50 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 50 100 150 200 Figure 4. On-Resistance Variation with temperature Figure 3. Capacitance Characteristics 1.3 1.20 VGE = 10V ID = 250µA 1.2 BVDDSS, NORMALIZED DRAINS-SOURCE BREAKDOWN Vth, NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 0 TJ, JUNCTION TEMPERATURE (ºC) 1.1 1.0 0.9 0.8 0.7 0.6 ID = 250µA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 -50 TJ, JUNCTION TEMPERATURE (ºC) Figure 5. Gate Threshold Variation with Temperature -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (ºC) Figure 6. Breakdown Voltage Variation with Temperature http:// www.sirectsemi.com 125 PS90N80 21 20 IS, SOURCE-DRAIN CURRENT (A) TRANSCONDUCTANCE (S) VGS = 5V 18 15 12 9 6 3 0 Tj = 25ºC 10 1 0 0 5 10 15 20 25 30 0.4 IDS, DRAIN-SOURCE CURRENT (A) VGS, GATE TO SOURCE VOLTAGE VDS = 30V ID = 75A 8 6 4 2 0 4 6 8 10 12 1.0 1.2 1.4 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 2 0.8 VDS, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transconductance Variation with Drain Current 0 0.6 14 TOTAL GATE CHARGE (nC) Figure 9. Gate Charge http:// www.sirectsemi.com 1.6 PS90N80 TO-220AB PACKAGE L B M C D K A E F O G I J H G DIM A B C D E F G H I J K L M N O N H D S DIMENSIONS INCHES MM MIN MAX MIN MAX .579 .606 14.70 15.40 .392 .411 9.95 10.45 .104 .116 2.65 2.95 .248 .272 6.30 6.90 .325 .350 8.25 8.90 .126 .157 3.20 4.00 .492 .551 12.50 14.00 .096 .108 2.45 2.75 .028 .039 0.70 1.00 .010 .022 0.25 0.55 .146 .157 3.70 4.00 .167 .187 4.25 4.75 .045 .057 1.15 1.45 .089 .114 2.25 2.90 .047 .055 1.20 1.40 NOTE Sirectifier Global Corp., Delaware, U.S.A. U.S.A.: [email protected] France: [email protected] Taiwan: [email protected] Hong Kong: [email protected] China: [email protected] …Thailand: [email protected] Philippines: [email protected] Belize: [email protected] http:// www.sirectsemi.com